A 120-mm2 64-Mb NAND flash memory achieving 180 ns/Byte effective program speed. - Jin-Ki Kim; Koji Sakui; Sung-Soo Lee; Yasuo Itoh; Suk-Chon Kwon; Kazuhisa Kanazawa; Ki-Jun Lee; Hiroshi Nakamura; Kang-Young Kim; Toshihiko Himeno; Jang-Rae Kim; Kazushige Kanda; et al. (IEEE J. Solid State Circuits, 1997)

A 130-mm/2, 256-Mbit NAND flash with shallow trench isolation technology. - Kenichi Imamiya; Yoshihisa Sugiura; Hiroshi Nakamura; Toshihiko Himeno; Ken Takeuchi; Tamio Ikehashi; Kazushige Kanda; Koji Hosono; Riichiro Shirota; Seiichi Aritome; Kazuhiro Shimizu; Kazuo Hatakeyama; et al. (IEEE J. Solid State Circuits, 1999)

A 125-mm2 1-Gb NAND flash memory with 10-MByte/s program speed. - Kenichi Imamiya; Hiroshi Nakamura; Toshihiko Himeno; Toshio Yamamura; Tamio Ikehashi; Ken Takeuchi; Kazushige Kanda; Koji Hosono; Takuya Futatsuyama; Koichi Kawai; Riichiro Shirota; Norihisa Arai; et al. (IEEE J. Solid State Circuits, 2002)

A 113mm2 32Gb 3b/cell NAND flash memory. - Takuya Futatsuyama; Norihiro Fujita; Naoya Tokiwa; Yoshihiko Shindo; Toshiaki Edahiro; Teruhiko Kamei; Hiroaki Nasu; Makoto Iwai; Koji Kato; Yasuyuki Fukuda; Naoaki Kanagawa; Naofumi Abiko; et al. (ISSCC, 2009)