A low-current Ku-band GaAs monolithic image rejection down-converter. - Toshihiko Yoshimasu; Keiichi Sakuno; Nobuyuki Matsumoto; Eiji Suematsu; Toshiya Tsukao; Takashi Tomita (IEEE J. Solid State Circuits, 1992)

An HBT MMIC power amplifier with an integrated diode linearizer for low-voltage portable phone applications. - Toshihiko Yoshimasu; Masanori Akagi; Noriyuki Tanba; Shinji Hara (IEEE J. Solid State Circuits, 1998)

Low Phase Noise, InGaP/GaAs HBT VCO MMIC for Millimeter-Wave Applications. - Satoshi Kurachi; Toshihiko Yoshimasu (IEICE Trans. Electron., 2005)

A SiGe BiCMOS VCO IC with Highly Linear Kvco for 5-GHz-Band Wireless LANs. - Satoshi Kurachi; Toshihiko Yoshimasu; Haiwen Liu; Nobuyuki Itoh; Koji Yonemura (IEICE Trans. Electron., 2007)

15 GHz-band low phase-noise LC-VCO with second harmonic tunable filtering technique. - Qing Liu 032; Jiangtao Sun; Toshihiko Yoshimasu; Satoshi Kurachi; Nobuyuki Itoh (PIMRC, 2009)

A 1.2-3.2 GHz CMOS VCO IC Utilizing Transformer-Based Variable Inductors and AMOS Varactors. - Qing Liu 032; Yusuke Takigawa; Satoshi Kurachi; Nobuyuki Itoh; Toshihiko Yoshimasu (IEICE Trans. Fundam. Electron. Commun. Comput. Sci., 2011)

A Broadband High Suppression Frequency Doubler IC for Sub-Millimeter-Wave UWB Applications. - Jiangtao Sun; Qing Liu 032; Yong-Ju Suh; Takayuki Shibata; Toshihiko Yoshimasu (IEICE Trans. Fundam. Electron. Commun. Comput. Sci., 2011)

A 66-dBc Fundamental Suppression Frequency Doubler IC for UWB Sensor Applications. - Jiangtao Sun; Qing Liu 032; Yong-Ju Suh; Takayuki Shibata; Toshihiko Yoshimasu (IEICE Trans. Electron., 2011)

A CMOS Class-G Supply Modulation for Polar Power Amplifiers with High Average Efficiency and Low Ripple Noise. - Qing Liu 032; Jiangtao Sun; Yong-Ju Suh; Nobuyuki Itoh; Toshihiko Yoshimasu (IEICE Trans. Fundam. Electron. Commun. Comput. Sci., 2012)

23Gbps 9.4pJ/bit 80/100GHz band CMOS transceiver with on-board antenna for short-range communication. - Kensuke Nakajima; Akihiro Maruyama; Masato Kohtani; Tsuyoshi Sugiura; Eiichiro Otobe; Jaejin Lee; Shinhee Cho; Kyusub Kwak; Jeongseok Lee; Toshihiko Yoshimasu; Minoru Fujishima (A-SSCC, 2014)

A 2.5-GHz band low-voltage high efficiency class-E power amplifier IC with body effect. - Taufiq Alif Kurniawan; Xin Yang; Xiao Xu; Zheng Sun; Toshihiko Yoshimasu (ISIC, 2014)

A 5-GHz Band WLAN SiGe HBT Power Amplifier IC with Novel Adaptive-Linearizing CMOS Bias Circuit. - Xin Yang; Tsuyoshi Sugiura; Norihisa Otani; Tadamasa Murakami; Eiichiro Otobe; Toshihiko Yoshimasu (IEICE Trans. Electron., 2015)

A 28-GHz-band Stacked FET Linear Power Amplifier IC with 36.2 % PAE at 3-dB back-off from P1dB in 56-nm SOI CMOS. - Cuilin Chen; Tsuyoshi Sugiura; Toshihiko Yoshimasu (RWS, 2019)

High Efficiency Class-E and Compact Doherty Power Amplifiers with Novel Harmonics Termination for Handset Applications. - Tsuyoshi Sugiura; Satoshi Furuta; Tadamasa Murakami; Koki Tanji; Norihisa Otani; Toshihiko Yoshimasu (IEICE Trans. Electron., 2019)

Ultra-Low Voltage 15-GHz Band Best FoM <-190 dBc/Hz LC-VCO ICs with Novel Harmonic Tuned LC Tank in 45-nm SOI CMOS. - Xiao Xu; Tsuyoshi Sugiura; Toshihiko Yoshimasu (IEICE Trans. Electron., 2019)

A 28-GHz-Band Highly Linear Stacked-FET Power Amplifier IC with High Back-Off PAE in 56-nm SOI CMOS. - Cuilin Chen; Tsuyoshi Sugiura; Toshihiko Yoshimasu (IEICE Trans. Electron., 2020)

0.3 V 15-GHz Band VCO ICs with Novel Transformer-Based Harmonic Tuned Tanks in 45-nm SOI CMOS. - Xiao Xu; Tsuyoshi Sugiura; Toshihiko Yoshimasu (IEICE Trans. Electron., 2020)

A 26-GHz-Band High Back-Off Efficiency Stacked-FET Power Amplifier IC with Adaptively Controlled Bias and Load Circuits in 45-nm CMOS SOI. - Toshihiko Yoshimasu; Mengchu Fang; Tsuyoshi Sugiura (IEICE Trans. Fundam. Electron. Commun. Comput. Sci., 2021)

An Ultra-Low-Power Octave-Tuning VCO IC With a Single Analog Voltage-Controlled Novel Varactor. - Mengchu Fang; Toshihiko Yoshimasu (IEEE Trans. Circuits Syst. I Regul. Pap., 2022)

Ka-Band Stacked-FET Power Amplifier IC with Adaptively Controlled Gate Capacitor and Two-Step Adaptive Bias Circuit in 45-nm SOI CMOS. - Tsuyoshi Sugiura; Toshihiko Yoshimasu (IEICE Trans. Electron., 2023)

A 38-GHz Stacked-FET Linear Power Amplifier with Novel Phase Linearizer Circuit in 45-nm CMOS SOI. - Zhewen Wei; Toshihiko Yoshimasu (ISOCC, 2024)

A 14-GHz-Band Low-Supply-Voltage Low-Phase-Noise LC-VCO IC with Harmonic Tuned LC Tank in 45-nm CMOS SOI. - Chenxu Zhao; Mengchu Fang; Toshihiko Yoshimasu (ISOCC, 2024)