Evaluation of Pitch Deviations with Comprehensive Representation Suitable for Engagement Evaluation in Different Types of Gears. - Syuhei Kurokawa; Yasutsune Ariura; Toshiro Doi (Int. J. Autom. Technol., 2011)

Effects of N-Face Finishing on Geometry of Double-Side Polished GaN Substrate. - Koji Koyama; Hideo Aida; Michio Uneda; Hidetoshi Takeda; Seong-Woo Kim; Hiroki Takei; Tsutomu Yamazaki; Toshiro Doi (Int. J. Autom. Technol., 2014)

Editorial: Innovative SiC/GaN/Diamond Single-Crystal Substrates and Planarization Processing Technologies for the Next Generation ICT Society. - Toshiro Doi (Int. J. Autom. Technol., 2018)

Next-Generation, Super-Hard-to-Process Substrates and Their High-Efficiency Machining Process Technologies Used to Create Innovative Devices. - Toshiro Doi (Int. J. Autom. Technol., 2018)

Study of Femtosecond Laser Ablation Effect on Micro-Processing for 4H-SiC Substrate. - Chengwu Wang; Syuhei Kurokawa; Julong Yuan; Li Fan; Huizong Lu; Zhe Wu; Weifeng Yao; Kehua Zhang; Yu Zhang; Toshiro Doi (Int. J. Autom. Technol., 2018)