Breakdown behaviour of high-voltage GaN-HEMTs. - Wataru Saito; Takeshi Suwa; Takeshi Uchihara; Toshiyuki Naka; Taichi Kobayashi (Microelectron. Reliab., 2015)

UIS test of high-voltage GaN-HEMTs with p-type gate structure. - Wataru Saito; Toshiyuki Naka (Microelectron. Reliab., 2016)

Modeling of Field-Plate Effect on Gallium-Nitride-Based High Electron Mobility Transistors for High-Power Applications. - Takeshi Mizoguchi; Toshiyuki Naka; Yuta Tanimoto; Yasuhiro Okada; Wataru Saito; Mitiko Miura-Mattausch; Hans Jürgen Mattausch (IEICE Trans. Electron., 2017)

Relation between UIS withstanding capability and I-V characteristics in high-voltage GaN-HEMTs. - Wataru Saito; Toshiyuki Naka (Microelectron. Reliab., 2017)