Decrease in on-state gate current of AlGaN/GaN HEMTs by recombination-enhanced defect reaction of generated hot carriers investigated by TCAD simulation. - Hajime Sasaki; Kaoru Kadoiwa; Hidetoshi Koyama; Yoshitaka Kamo; Yoshitsugu Yamamoto; Toshiyuki Oishi; Kazuo Hayashi (Microelectron. Reliab., 2014)

Ka-Band GaN Large-Signal Model Considering Trap Effect on Nonlinear Capacitance by Using Transient S-Parameters Measurement. - Yutaro Yamaguchi 002; Tomohiro Otsuka; Masatake Hangai; Shintaro Shinjo; Toshiyuki Oishi (BCICTS, 2018)

Study of Self-heating Effect of GaN HEMTs with Buffer Traps by Low Frequency S-parameters Measurements and TCAD Simulation. - Tomohiro Otsuka; Yutaro Yamaguchi 002; Shintaro Shinjo; Toshiyuki Oishi (BCICTS, 2019)