Multi-scale electrothermal simulation and modelling of resistive random access memory devices. - Toufik Sadi; Liping Wang; Asen Asenov (PATMOS, 2016)

Impact of the Trap Attributes on the Gate Leakage Mechanisms in a 2D MS-EMC Nanodevice Simulator. - Cristina Medina-Bailon; Toufik Sadi; Carlos Sampedro 002; José Luis Padilla; Luca Donetti; Vihar P. Georgiev; Francisco Gámiz; Asen Asenov (NMA, 2018)

Microscopic KMC Modeling of Oxide RRAMs. - Toufik Sadi; Asen Asenov (NMA, 2018)

Stochastic analysis of surface roughness models in quantum wires. - Mihail Nedjalkov; Paul Ellinghaus; Josef Weinbub; Toufik Sadi; Asen Asenov; Ivan Dimov 001; Siegfried Selberherr (Comput. Phys. Commun., 2018)

Advanced Simulation of RRAM Memory Cells. - Toufik Sadi; Oves Badami; Vihar P. Georgiev; Jie Ding; Asen Asenov (ASICON, 2019)

Kinetic Monte Carlo Analysis of the Operation and Reliability of Oxide Based RRAMs. - Toufik Sadi; Oves Badami; Vihar P. Georgiev; Asen Asenov (LSSC, 2019)