Effect of thin gate dielectrics on DC, radio frequency and linearity characteristics of lattice-matched AlInN/AlN/GaN metal-oxide-semiconductor high electron mobility transistor. - Kanjalochan Jena; Raghunandan Swain; Trupti Ranjan Lenka (IET Circuits Devices Syst., 2016)

Compact thermal noise model for enhancement mode N-polar GaN MOS-HEMT including 2DEG density solution with two sub-bands. - Deepak Kumar Panda; Trupti Ranjan Lenka (IET Circuits Devices Syst., 2018)

Single and double-gate based AlGaN/GaN MOS-HEMTs for the design of low-noise amplifiers: a comparative study. - Deepak Kumar Panda; Rajan Singh; Trupti Ranjan Lenka; Thi Tan Pham; Ravi Teja Velpula; Barsha Jain; Ha Quoc Thang Bui; Hieu Pham Trung Nguyen (IET Circuits Devices Syst., 2020)

Photogeneration losses from interface trap density in Passivated Ultrathin CIGS Solar Cell. - Nour El I. Boukortt; Alamera Nouran Alquennah; Amal M. AlAmri; Salvatore Patanè; Trupti Ranjan Lenka; Rabin Paul (IECON, 2022)

Design of Deep-UV Nanowire LED with Al2O3 Quantum Dots and Step-Graded n-Type AlInGaN Electron Blocking Layer for High Quantum Efficiency. - Samadrita Das; Trupti Ranjan Lenka; Fazal Ahmed Talukdar; Hieu Pham Trung Nguyen (IECON, 2023)

Performance Analysis of Gate Engineered III-Nitride/ $ beta$-Ga2O3 Nano-HEMT for High-Power Nanoelectronics. - G. Purnachandra Rao; Trupti Ranjan Lenka; Hieu Pham Trung Nguyen (ISCAS, 2023)

Rear-Passivation Effect on Thin-Film Perovskite/u-CIGS Tandem Solar Cell Performance. - Nour El I. Boukortt; Antonio Garcia Loureiro; Salvatore Patanè; Mohamed Trabelsi 001; Trupti Ranjan Lenka; Ahmad Abushattal (IECON, 2024)

Prediction of Single Event Transient Propagation Using Machine Learning Models. - Marko S. Andjelkovic; Junchao Chen 001; Jelisaveta Aleksic; Vishnu Padmakumar; Milos Marjanovic; Nikolaos Zazatis; Trupti Ranjan Lenka; Danijel Dankovic; Christos P. Sotiriou; Fabian Vargas 001 (SMACD, 2025)