SiC JFET dc characteristics under extremely high ambient temperatures. - Tsuyoshi Funaki; Juan Carlos Balda; Jeremy Junghans; Avinash S. Kashyap; Fred D. Barlow; H. Alan Mantooth; Tsunenobu Kimoto; Takashi Hikihara (IEICE Electron. Express, 2004)

Switching characteristics of SiC JFET and Schottky diode in high-temperature dc-dc power converters. - Tsuyoshi Funaki; Juan Carlos Balda; Jeremy Junghans; Anuwat Jangwanitlert; Sharmila Mounce; Fred D. Barlow; H. Alan Mantooth; Tsunenobu Kimoto; Takashi Hikihara (IEICE Electron. Express, 2005)

Characterization of punch-through phenomenon in SiC-SBD by capacitance-voltage measurement at high reverse bias voltage. - Tsuyoshi Funaki; Shuntaro Matsuzaki; Tsunenobu Kimoto; Takashi Hikihara (IEICE Electron. Express, 2006)

Evaluation of capacitance-voltage characteristics for high voltage SiC-JFET. - Tsuyoshi Funaki; Tsunenobu Kimoto; Takashi Hikihara (IEICE Electron. Express, 2007)

High-temperature characteristics of SiC Schottky barrier diodes related to physical phenomena. - Tsuyoshi Funaki; Tsunenobu Kimoto; Takashi Hikihara (IEICE Electron. Express, 2008)

A study on electro thermal response of SiC power module during high temperature operation. - Tsuyoshi Funaki; Akira Nishio; Tsunenobu Kimoto; Takashi Hikihara (IEICE Electron. Express, 2008)

A study of SiC Power BJT performance and robustness. - Alberto Castellazzi; T. Takuno; Ryutaro Onishi; Tsuyoshi Funaki; Tsunenobu Kimoto; Takashi Hikihara (Microelectron. Reliab., 2011)

Thermal instability effects in SiC Power MOSFETs. - Alberto Castellazzi; Tsuyoshi Funaki; Tsunenobu Kimoto; Takashi Hikihara (Microelectron. Reliab., 2012)

Ultrahigh-voltage SiC devices for future power infrastructure. - Tsunenobu Kimoto (ESSDERC, 2013)

Progress and future challenges of silicon carbide devices for integrated circuits. - Tsunenobu Kimoto (CICC, 2014)

Rapid Revolution Speed Control of the Brushless DC Motor for Automotive LIDAR Applications. - Hironobu Akita; Tsunenobu Kimoto (IEICE Trans. Electron., 2020)

Performance Improvement and Reliability Physics in SiC MOSFETs. - Tsunenobu Kimoto; Keita Tachiki; A. Iijima; Mitsuaki Kaneko (IRPS, 2022)

An Overview of SiC High-Voltage Power Devices and High-Temperature ICs. - Tsunenobu Kimoto; M. Kaneko; Keita Tachiki; K. Ito; K. Mikami; H. Fujii; A. Inoue; N. Maeda (BCICTS, 2024)