A 48 MHz 880-nW Standby Power Normally-Off MCU with 1 Clock Full Backup and 4.69-μs Wakeup Featuring 60-nm Crystalline In-Ga-Zn Oxide BEOL-FETs. - Takahiko Ishizu; Yuto Yakubo; Kazuma Furutani; Atsuo Isobe; Masashi Fujita; Tomoaki Atsumi; Yoshinori Ando; Tsutomu Murakawa; Kiyoshi Kato; Masahiro Fujita; Shunpei Yamazaki (VLSI Circuits, 2019)

1Mbit 1T1C 3D DRAM with Monolithically Stacked One Planar FET and Two Vertical FET Heterogeneous Oxide Semiconductor layers over Si CMOS. - Yuki Okamoto; Yusuke Komura; Toshiki Mizuguchi; Toshihiko Saito; Minato Ito; K. Kimura; Tatsuya Onuki; Yoshinori Ando; Hiromi Sawai; Tsutomu Murakawa; Hitoshi Kunitake; Takanori Matsuzaki; et al. (VLSI Technology and Circuits, 2023)

Heterogeneous Oxide Semiconductor FETs Comprising Planar FET and Vertical Channel FETs Monolithically Stacked on Si CMOS, Enabling 1-Mbit 3D DRAM. - Hiraki Inoue; Takeya Hirose; Toshiki Mizuguchi; Yusuke Komura; Toshihiko Saito; Minato Ito; Kiyotaka Kimura; Tatsuya Onuki; Yoshinori Ando; Hiromi Sawai; Tsutomu Murakawa; Hitoshi Kunitake; et al. (IMW, 2024)