Degradation analysis and current collapse imaging of AlGaN/GaN HEMTs by measurement of electric field-induced optical second-harmonic generation. - Takashi Katsuno; Takaaki Manaka; Tsuyoshi Ishikawa; Hiroyuki Ueda; Tsutomu Uesugi; Mitsumasa Iwamoto (Microelectron. Reliab., 2014)

Reliability issues of gate oxides and $p-n$ junctions for vertical GaN metal-oxide-semiconductor field-effect transistors (Invited). - Tetsuo Narita; Daigo Kikuta; Kenji Ito; Tomoyuki Shoji; Tomohiko Mori; Satoshi Yamaguchi; Yasuji Kimoto; Kazuyoshi Tomita; Masakazu Kanechika; Takeshi Kondo; Tsutomu Uesugi; Jun Kojima; et al. (IRPS, 2023)