Constant-charge-injection programming: a novel high-speed programming method for multilevel flash memories. - Hideaki Kurata; Shunichi Saeki; Takashi Kobayashi 002; Yoshitaka Sasago; Tsuyoshi Arigane; Kazuo Otsuga; Takayuki Kawahara (IEEE J. Solid State Circuits, 2005)

A 130-nm CMOS 95-mm2 1-Gb Multilevel AG-AND-Type Flash Memory with 10-MB/s Programming Throughput. - Hideaki Kurata; Shunichi Saeki; Takashi Kobayashi 002; Yoshitaka Sasago; Tsuyoshi Arigane; Keiichi Yoshida; Yoshinori Takase; Takayuki Yoshitake; Osamu Tsuchiya; Yoshinori Ikeda; Shunichi Narumi; Michitaro Kanamitsu; et al. (IEICE Trans. Electron., 2006)

A 126 mm2 4-Gb Multilevel AG-AND Flash Memory with Inversion-Layer-Bit-Line Technology. - Hideaki Kurata; Satoshi Noda; Yoshitaka Sasago; Kazuo Otsuga; Tsuyoshi Arigane; Tetsufumi Kawamura; Takashi Kobayashi 002; Hitoshi Kume; Kazuki Homma; Teruhiko Ito; Yoshinori Sakamoto; Masahiro Shimizu; et al. (IEICE Trans. Electron., 2007)

Selective-Capacitance Constant-Charge-Injection Programming Scheme for High-Speed Multilevel AG-AND Flash Memories. - Kazuo Otsuga; Hideaki Kurata; Satoshi Noda; Yoshitaka Sasago; Tsuyoshi Arigane; Tetsufumi Kawamura; Takashi Kobayashi 002 (IEICE Trans. Electron., 2007)