SiC JFET dc characteristics under extremely high ambient temperatures. - Tsuyoshi Funaki; Juan Carlos Balda; Jeremy Junghans; Avinash S. Kashyap; Fred D. Barlow; H. Alan Mantooth; Tsunenobu Kimoto; Takashi Hikihara (IEICE Electron. Express, 2004)

Evaluating performance of hybrid-type power system simulator based on transient stability analysis: a dynamical system approach. - Yoshihiko Susuki; Yasuhiro Takama; Tsuyoshi Funaki; Takashi Hikihara (ISCAS (4), 2005)

Simple circuit model of SiC pin diode composed by using experimental electrical characteristics. - Katsunori Asano; Tsuyoshi Funaki; Yoshitaka Sugawara; Takashi Hikihara (IEICE Electron. Express, 2005)

Switching characteristics of SiC JFET and Schottky diode in high-temperature dc-dc power converters. - Tsuyoshi Funaki; Juan Carlos Balda; Jeremy Junghans; Anuwat Jangwanitlert; Sharmila Mounce; Fred D. Barlow; H. Alan Mantooth; Tsunenobu Kimoto; Takashi Hikihara (IEICE Electron. Express, 2005)

Characterization of punch-through phenomenon in SiC-SBD by capacitance-voltage measurement at high reverse bias voltage. - Tsuyoshi Funaki; Shuntaro Matsuzaki; Tsunenobu Kimoto; Takashi Hikihara (IEICE Electron. Express, 2006)

Evaluation of capacitance-voltage characteristics for high voltage SiC-JFET. - Tsuyoshi Funaki; Tsunenobu Kimoto; Takashi Hikihara (IEICE Electron. Express, 2007)

Enhanced Entrainment of Synchronous Inverters for Distributed Power Sources. - Takashi Hikihara; Tadashi Sawada; Tsuyoshi Funaki (IEICE Trans. Fundam. Electron. Commun. Comput. Sci., 2007)

High-temperature characteristics of SiC Schottky barrier diodes related to physical phenomena. - Tsuyoshi Funaki; Tsunenobu Kimoto; Takashi Hikihara (IEICE Electron. Express, 2008)

A study on electro thermal response of SiC power module during high temperature operation. - Tsuyoshi Funaki; Akira Nishio; Tsunenobu Kimoto; Takashi Hikihara (IEICE Electron. Express, 2008)

The Origin of Nonlinear Phenomena in TCR-SVC Associated With Parametric Excitation of Intrinsic Oscillation and External Excitation. - Tsuyoshi Funaki; Kuoto Nakagawa; Takashi Hikihara (IEEE Trans. Circuits Syst. I Regul. Pap., 2008)

The influence of parasitic components on power MOSFET switching operation in power conversion circuits. - Tsuyoshi Funaki; Hisato Arioka; Takashi Hikihara (IEICE Electron. Express, 2009)

Characterization of SiC power module for high switching frequency operation. - Tsuyoshi Funaki; Hiroyasu Inoue; Masashi Sasagawa; Takashi Nakamura (IEICE Electron. Express, 2010)

Switching characteristics of a diamond Schottky barrier diode. - Kazuya Kodama; Tsuyoshi Funaki; Hitoshi Umezawa; Shinichi Shikata (IEICE Electron. Express, 2010)

Experimental validation of an equivalent mechanical model for understanding power system stability. - Yuko Omagari; Tsuyoshi Funaki (IEICE Electron. Express, 2010)

Characterization of the gate-voltage dependency of input capacitance in a SiC MOSFET. - Nathabhat Phankong; Tsuyoshi Funaki; Takashi Hikihara (IEICE Electron. Express, 2010)

Switching characteristics of lateral-type and vertical-type SiC JFETs depending on their internal parasitic capacitances. - Nathabhat Phankong; Tsuyoshi Funaki; Takashi Hikihara (IEICE Electron. Express, 2010)

Comparative study of the static and switching characteristics of SiC and Si MOSFETs. - Tsuyoshi Funaki; Yuki Nakano; Takashi Nakamura (IEICE Electron. Express, 2011)

A study on modeling of dynamic characteristics of circuit component in TDR measurement based on Prony analysis. - Takaaki Ibuchi; Tsuyoshi Funaki (IEICE Electron. Express, 2011)

A study of SiC Power BJT performance and robustness. - Alberto Castellazzi; T. Takuno; Ryutaro Onishi; Tsuyoshi Funaki; Tsunenobu Kimoto; Takashi Hikihara (Microelectron. Reliab., 2011)

High temperature switching operation of a power diamond Schottky barrier diode. - Tsuyoshi Funaki; Makiko Hirano; Hitoshi Umezawa; Shinichi Shikata (IEICE Electron. Express, 2012)

Thermal instability effects in SiC Power MOSFETs. - Alberto Castellazzi; Tsuyoshi Funaki; Tsunenobu Kimoto; Takashi Hikihara (Microelectron. Reliab., 2012)

A study on gate voltage fluctuation of MOSFET induced by switching operation of adjacent MOSFET in high voltage power conversion circuit. - Tsuyoshi Funaki (EMC Compo, 2013)

A method for evaluating installable capacity of distributed generators with power factor control in MV and LV distribution networks. - Hideharu Sugihara; Tsuyoshi Funaki (ISGT Europe, 2013)

Comparative study of self turn-on phenomenon in high-voltage Si and SiC power MOSFETs. - Tsuyoshi Funaki (IEICE Electron. Express, 2013)

Loss reduction of lateral power diode on SOI substrate with trenched buried oxide layer. - Satoshi Shiraki; Shigeki Takahashi; Youichi Ashida; Atsuyuki Hiruma; Tsuyoshi Funaki (IEICE Electron. Express, 2013)

A study on the self turn-on phenomenon of power MOSFET induced by the turn-off operation of body diodes. - Tsuyoshi Funaki (IEICE Electron. Express, 2014)

Loss and conducted noise characteristics for CCM PFC circuit with SiC-Schottky barrier diode. - Takaaki Ibuchi; Tsuyoshi Funaki (IEICE Electron. Express, 2014)

Conducted noise of GaN Schottky barrier diode in a DC-DC converter. - Takaaki Ibuchi; Tsuyoshi Funaki; Shinji Ujita; Masahiro Ishida; Tetsuzo Ueda (IEICE Electron. Express, 2015)

Transient thermal analysis of packaged SiC SBDs for high temperature operation. - Taehwa Kim; Tsuyoshi Funaki (IEICE Electron. Express, 2016)

Methodology for the determination of real-time dynamic line ratings for secure operation of overhead conductors. - Bonface Ngoko; Hideharu Sugihara; Tsuyoshi Funaki (ISGT Europe, 2017)

Switching surge voltage suppression in SiC half-bridge module with double side conducting ceramic substrate and snubber capacitor. - Shuhei Fukunaga; Tsuyoshi Funaki (IEICE Electron. Express, 2017)

Open-circuit-voltage characterization system design for studies of phase-transition mechanism and deterioration in Mn-type Li-ion batteries. - Natthawuth Somakettarin; Hideharu Sugihara; Tsuyoshi Funaki (IEICE Electron. Express, 2017)

An experimental study on estimating dynamic junction temperature of SiC MOSFET. - Shuhei Fukunaga; Tsuyoshi Funaki (IEICE Electron. Express, 2018)

Visualization of noise current propagation in a power module with scanning time-synchronized near magnetic field measurement. - Takaaki Ibuchi; Eisuke Masuda; Tsuyoshi Funaki (IEICE Electron. Express, 2018)

Analysis on Temperature Dependency of Effective AC Conductor Resistance of Underground Cables for Dynamic Line Ratings in Smart Grids. - Hideharu Sugihara; Tsuyoshi Funaki (HPCC/SmartCity/DSS, 2019)

An experimental study on dynamic junction temperature estimation of SiC MOSFET with built-in SBD. - Shuhei Fukunaga; Tsuyoshi Funaki; Shinsuke Harada; Yusuke Kobayashi (IEICE Electron. Express, 2019)

Frequency-Domain EMI Simulation of Power Electronic Converter with Voltage-Source and Current-Source Noise Models. - Keita Takahashi 002; Takaaki Ibuchi; Tsuyoshi Funaki (IEICE Trans. Commun., 2019)

EMI characterization for power conversion circuit with SiC power devices. - Takaaki Ibuchi; Tsuyoshi Funaki (ATS, 2020)

A Modular Approach to Large-Signal Modeling of an Interconnected AC/MTDC System. - Yoshihiko Susuki; Naoki Kawamoto; Yusuke Ohashi; Atsushi Ishigame; Tsuyoshi Funaki; Salvatore D'Arco (ISGT-Europe, 2020)

Transient thermal characterization of β-Ga2O3 Schottky barrier diodes. - Shota Seki; Tsuyoshi Funaki; Jun Arima; Minoru Fujita; Jun Hirabayashi; Kazuyoshi Hanabusa (IEICE Electron. Express, 2022)

Noise Suppression in SiC-MOSFET Body Diode Turn-Off Operation with Simple and Robust Gate Driver. - Hiroshi Suzuki; Tsuyoshi Funaki (IEICE Trans. Electron., 2022)

Evaluation of Phase Measurement Error in Digital Oscilloscopes. - Shuhei Fukunaga; Tsuyoshi Funaki (I2MTC, 2024)