Integration of SPAD in 28nm FDSOI CMOS technology. - Tulio Chaves de Albuquerque; Françis Calmon; Raphael Clerc; Patrick Pittet; Younes Benhammou; Dominique Golanski; Sebastien Jouan; Denis Rideau; Andreia Cathelin (ESSDERC, 2018)

Body-biasing considerations with SPAD FDSOI: advantages and drawbacks. - Tulio Chaves de Albuquerque; Dylan Issartel; Raphael Clerc; Patrick Pittet; Remy Cellier; Wilfried Uhring; Andreia Cathelin; Françis Calmon (ESSDERC, 2019)

40-nm RFSOI technology exhibiting 90fs RON × COFF and fT/fMAX of 250 GHz/350 GHz targeting sub-6 GHz and mmW 5G applications. - S. Crémer; N. Pelloux; F. Gianesello; Y. Mourier; G. Haury; Tulio Chaves de Albuquerque; Frederic Monsieur; H. Audouin; C. A. Legrand; C. Diouf; J. Azevedo Goncalves; C. Belem Goncalves; et al. (ESSDERC, 2023)