Ultra-high speed modulation-doped field-effect transistors: a tutorial review. - Loi D. Nguyen; Lawrence E. Larson; Umesh K. Mishra (Proc. IEEE, 1992)

Ultrahigh efficiency obtained with GaAs-on-insulator MESFET technology. - Thomas J. Jenkins; Lois T. Kehias; Primit Parikh; James Ibbetson; Umesh K. Mishra; Daniel Docter; Minh Le; Joe Pusl; Duncan Widman (IEEE J. Solid State Circuits, 1999)

Broadband GaAs MESFET and GaN HEMT resistive feedback power amplifiers. - Karthikeyan Krishnamurthy; Ramakrishna Vetury; Stacia Keller; Umesh K. Mishra; Mark J. W. Rodwell; Stephen I. Long (IEEE J. Solid State Circuits, 2000)

AlGaN/GaN HEMTs-an overview of device operation and applications. - Umesh K. Mishra; Primit Parikh; YiFeng Wu (Proc. IEEE, 2002)

Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy. - Andrea Corrion; Christiane Poblenz; Patrick Waltereit; Tomás Palacios; Siddharth Rajan; Umesh K. Mishra; Jim S. Speck (IEICE Trans. Electron., 2006)

GaN-Based RF Power Devices and Amplifiers. - Umesh K. Mishra; Likun Shen; Thomas E. Kazior; YiFeng Wu (Proc. IEEE, 2008)

AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes. - Martin Kuball; Milan Tapajna; Richard J. T. Simms; Mustapha Faqir; Umesh K. Mishra (Microelectron. Reliab., 2011)

1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions. - Tania Roy; Yevgeniy S. Puzyrev; En-xia Zhang; Sandeepan DasGupta; Sarah A. Francis; Daniel M. Fleetwood; Ronald D. Schrimpf; Umesh K. Mishra; Jim S. Speck; Sokrates T. Pantelides (Microelectron. Reliab., 2011)

Commercialization and reliability of 600 V GaN power switches. - Toshihide Kikkawa; Tsutomu Hosoda; Ken Shono; Kenji Imanishi; Yoshimori Asai; YiFeng Wu; Likun Shen; Kurt Smith; Dixie Dunn; Saurabh Chowdhury; Peter Smith; John Gritters; et al. (IRPS, 2015)

Virtual-Source Modeling of N-polar GaN MISHEMTS. - Rohit R. Karnaty; Umesh K. Mishra; James F. Buckwalter; Matthew Guidry; Pawana Shrestha; Brian Romanczyk; Nirupam Hatui; Xun Zheng; Christian Wurm; Haoran Li; Stacia Keller (BCICTS, 2019)

Reduction of Saturation Voltage in InGaAs-Channel/lnGaN-Drain Vertical FETs and the role of traps at the InGaAs/lnGaN junction. - Shalini Lal; Jing Lu; Brian J. Thibeault; Man Hoi Wong; Chris G. Van de Walle; Steven P. DenBaars; Umesh K. Mishra (DRC, 2019)

Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs). - Maria Ruzzarin; Matteo Borga; Enrico Zanoni; Matteo Meneghini; Gaudenzio Meneghesso; Dong Ji; Wenwen Li; Silvia H. Chan; Anchal Agarwal; Chirag Gupta; Stacia Keller; Umesh K. Mishra; et al. (IRPS, 2019)

Near-ideal Ru/N-polar GaN Schottky diode with ultralow reverse leakage. - Wenjian Liu; Islam Sayed; Brian Romanczyk; Nirupam Hatui; Jana Georgieva; Haoran Li; Stacia Keller; Umesh K. Mishra (DRC, 2020)

A Novel Concept using Derivative Superposition at the Device-Level to Reduce Linearity Sensitivity to Bias in N-polar GaN MISHEMT. - Pawana Shrestha; Matthew Guidry; Brian Romanczyk; Rohit R. Karnaty; Nirupam Hatui; Christian Wurm; Athith Krishna; Shubhra S. Pasayat; Stacia Keller; James F. Buckwalter; Umesh K. Mishra (DRC, 2020)

Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs. - Francesca Chiocchetta; Claudia Calascione; Carlo De Santi; Chandan Sharma; Fabiana Rampazzo; Xun Zheng; Brian Romanczyk; Matthew Guidry; Haoran Li; Stacia Keller; Umesh K. Mishra; Gaudenzio Meneghesso; et al. (IRPS, 2021)

Short-Circuit Capability with GaN HEMTs : Invited. - Davide Bisi; Bill Cruse; Philip Zuk; Primit Parikh; Umesh K. Mishra; Tsutomu Hosoda; Masamichi Kamiyama; Masahito Kanamura (IRPS, 2022)

Record 1 W output power from a single N-Polar GaN MISHEMT at 94 GHz. - Emre Akso; Christopher Clymore; Wenjian Liu; Henry Collins; Brian Romanczyk; Weiyi Li; Nirupam Hatui; Christian Wurm; Stacia Keller; Matthew Guidry; Umesh K. Mishra (DRC, 2023)

Gallium Nitride Versus Silicon Carbide: Beyond the Switching Power Supply. - Umesh K. Mishra (Proc. IEEE, 2023)

Self-aligned Scaled Planar N-polar GaN HEMTs with Raised Regrowth. - Boyu Wang; Kamruzzaman Khan; Emre Akso; Henry Collins; Tanmay Chavan; Matthew Guidry; Umesh K. Mishra (DRC, 2024)

Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects. - Marco Saro; Francesco de Pieri; Andrea Carlotto; Mirko Fornasier; Fabiana Rampazzo; Carlo De Santi; Gaudenzio Meneghesso; Matteo Meneghini; Enrico Zanoni; Davide Bisi; Matthew Guidry; Stacia Keller; et al. (IRPS, 2024)

A new S-parameter Deep Level Transient Spectroscopy (S-DLTS) Method: Development and Qualification. - Christopher J. Clymore; Matthew Guidry; Boyu Wang; Emre Akso; Henry Collins; Robert Hamwey; Nirupam Hatui; Stacia Keller; Umesh K. Mishra (IRPS, 2025)