Reliability aspects of Hf-based capacitors: Breakdown and trapping effects. - Rainer Duschl; Martin Kerber; A. Avellan; S. Jakschik; Uwe Schroeder; S. Kudelka (Microelectron. Reliab., 2007)

Strontium doped hafnium oxide thin films: Wide process window for ferroelectric memories. - Tony Schenk; Stefan Mueller; Uwe Schroeder; Robin Materlik; Alfred Kersch; Mihaela Ioana Popovici; Christoph Adelmann; Sven Van Elshocht; Thomas Mikolajick (ESSDERC, 2013)

Comparison of hafnia and PZT based ferroelectrics for future non-volatile FRAM applications. - Franz P. G. Fengler; Milan Pesic; Sergej Starschich; Theodor Schneller; Ulrich Böttger; Tony Schenk; Min Hyuk Park; Thomas Mikolajick; Uwe Schroeder (ESSDERC, 2016)

Impact of field cycling on HfO2 based non-volatile memory devices. - Uwe Schroeder; Milan Pesic; Tony Schenk; Halid Mulaosmanovic; Stefan Slesazeck; Johannes Ocker; Claudia Richter; Ekaterina Yurchuk; K. Khullar; Johannes Müller; Patrick Polakowski; E. D. Grimley; et al. (ESSDERC, 2016)

Anti-ferroelectric ZrO2, an enabler for low power non-volatile 1T-1C and 1T random access memories. - Milan Pesic; Michael Hoffmann 008; Claudia Richter; Stefan Slesazeck; Thomas Kämpfe; Lukas M. Eng; Thomas Mikolajick; Uwe Schroeder (ESSDERC, 2017)

Anti-ferroelectric-like ZrO2 non-volatile memory: Inducing non-volatility within state-of-the-art DRAM. - Milan Pesic; Michael Hoffmann 008; Claudia Richter; Stefan Slesazeck; Uwe Schroeder; Thomas Mikolajick (NVMTS, 2017)

Embedding hafnium oxide based FeFETs in the memory landscape. - Stefan Slesazeck; Uwe Schroeder; Thomas Mikolajick (ICICDT, 2018)

Variants of Ferroelectric Hafnium Oxide based Nonvolatile Memories. - Thomas Mikolajick; Halid Mulaosmanovic; Michael Hoffmann 008; Benjamin Max; Terence Mittmann; Uwe Schroeder; Stefan Slesazeck (DRC, 2019)

Ferroelectric Hf1-xZrxO2 memories: device reliability and depolarization fields. - Patrick D. Lomenzo; Stefan Slesazeck; Michael Hoffmann 008; Thomas Mikolajick; Uwe Schroeder; Benjamin Max (NVMTS, 2019)

High-Endurance and Low-Voltage operation of 1T1C FeRAM Arrays for Nonvolatile Memory Application. - Jun Okuno; Takafumi Kunihiro; Kenta Konishi; Hideki Maemura; Yusuke Shuto; Fumitaka Sugaya; Monica Materano; Tarek Ali; Maximilian Lederer; Kati Kühnel; Konrad Seidel; Uwe Schroeder; et al. (IMW, 2021)

Reliability aspects of ferroelectric hafnium oxide for application in non-volatile memories. - Halid Mulaosmanovic; Patrick D. Lomenzo; Uwe Schroeder; Stefan Slesazeck; Thomas Mikolajick; Benjamin Max (IRPS, 2021)

Unleashing the Potential of Integrated Ferroelectric Devices with Hafnium Oxide. - Thomas Mikolajick; Uwe Schroeder; Stefan Slesazeck (DRC, 2022)

Influence of Interfacial Oxide Layers in Hf0.5Zr0.5O2 based ferroelectric capacitors on reliability performance. - Ruben Alcala; Furqan Mehmood; Pramoda Vishnumurthy; Terence Mittmann; Thomas Mikolajick; Uwe Schroeder (IMW, 2022)

Analog Content-Addressable Memory from Complementary FeFETs. - Xiwen Liu; Keshava Katti; Yunfei He; Paul Jacob; Claudia Richter; Uwe Schroeder; Santosh Kurinec; Pratik Chaudhari; Deep Jariwala (CoRR, 2023)

Ferroelectric HfO2-based Capacitors for FeRAM: Reliability from Field Cycling Endurance to Retention (invited). - Pramoda Vishnumurthy; Ruben Alcala; Thomas Mikolajick; Uwe Schroeder; Luis Azevedo Antunes; Alfred Kersch (IRPS, 2024)

HZO-based Nonvolatile SRAM Array with 100% Bit Recall Yield and Sufficient Retention Time at 85°C. - Yusuke Shuto; Jun Okuno; Tsubasa Yonai; Ryo Ono; Peter Reinig; Maximilian Lederer; Konrad Seidel; Ruben Alcala; Thomas Mikolajick; Uwe Schroeder; Taku Umebayashi; Kentaro Akiyama (VLSI Technology and Circuits, 2024)

Novel Ultrafast Non-Destructive Readout of FeRAM by Low-Voltage Transient Current. - Mor M. Dahan; Emanuel Ber; Florian Wunderwald; Gilad Zilberman; Guy Orlev; Yair Keller; Einav Raveh; Ruben Alcala; Thomas Mikolajick; Uwe Schroeder; Eilam Yalon (IMW, 2025)