V. Barral

According to our database, V. Barral authored at least 2 papers in 2014.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2014

Variability of UTBB MOSFET analog figures of merit in wide frequency range.

Sergej Makovejev, B. Kazemi Esfeh, Jean-Pierre Raskin, Valeria Kilchytska, Denis Flandre, V. Barral, Nicolas Planes, M. Haond

Proceedings of the 44th European Solid State Device Research Conference, 2014

Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs.

François Andrieu, Mikaël Cassé, E. Baylac, P. Perreau, O. Nier, Denis Rideau, R. Berthelon, Franck Pourchon, A. Pofelski, Barbara De Salvo, C. Gallon, Vincent Mazzocchi, D. Barge, C. Gaumer, O. Gourhant, A. Cros, V. Barral, Rossella Ranica, Nicolas Planes, Walter Schwarzenbach, E. Richard, Emmanuel Josse, Olivier Weber, Franck Arnaud, Maud Vinet, Olivier Faynot, M. Haond

Proceedings of the 44th European Solid State Device Research Conference, 2014