A study of the linearity between Ion and log Ioff of modern MOS transistors and its application to stress engineering. - W. S. Lau; Peizhen Yang; C. W. Eng; V. Ho; C. H. Loh; S. Y. Siah; D. Vigar; L. Chan (Microelectron. Reliab., 2008)

An explanation of the dependence of the effective saturation velocity on gate voltage in sub-0.1 µm metal-oxide-semiconductor transistors by quasi-ballistic transport theory. - W. S. Lau; Peizhen Yang; V. Ho; L. F. Toh; Y. Liu; S. Y. Siah; L. Chan (Microelectron. Reliab., 2008)

Drain current saturation at high drain voltage due to pinch off instead of velocity saturation in sub-100 nm metal-oxide-semiconductor transistors. - W. S. Lau; Peizhen Yang; Jason Zhiwei Chian; V. Ho; C. H. Loh; S. Y. Siah; L. Chan (Microelectron. Reliab., 2009)

402 Tb/s GMI data-rate OESCLU-band Transmission. - Benjamin J. Puttnam; Ruben S. Luis; Ian D. Phillips; Mingming Tan; Aleksandr Donodin; Dini Pratiwi; Lauren Dallachiesa; Y. Huang; Mikael Mazur; Nicolas K. Fontaine; H. Chen; Dicky Chung; et al. (OFC, 2024)