Charge storage peculiarities in poly-Si-SiO2-Si memory devices with Si nanocrystals rich SiO2. - V. I. Turchanikov; A. N. Nazarov; V. S. Lysenko; Josep Carreras; B. Garrido (Microelectron. Reliab., 2005)

Charge accumulation in the dielectric of the nanocluster NVM MOS structures under anti- and unipolar W/E window formation. - V. I. Turchanikov; A. N. Nazarov; V. S. Lysenko; V. Ostahov; O. Winkler; B. Spangenberg; H. Kurz (Microelectron. Reliab., 2007)