On the Fitting and Improvement of RRAM Stanford-Based Model Parameters Using TiN/Ti/HfO2/W Experimental Data. - V. Mahboubi; Daniel Arumí; Álvaro Gómez-Pau; Rosa Rodríguez-Montañés; Salvador Manich (DCIS, 2022)

Engineering UGR-VCMTCF RRAM Model for Adjusting to TiN/Ti/HfO2/W Devices. - V. Mahboubi; Á. Gómez; Antonio Calomarde; Daniel Arumí; R. Rodríguez; Salvador Manich (DCIS, 2024)

On the Fine Tuning of RRAM Resistance Under Variability Using Current Pulses at SET. - V. Mahboubi; Á. Gómez; Antonio Calomarde; Daniel Arumí; R. Rodríguez; Salvador Manich (IOLTS, 2024)