Soft error study in double gated FinFET-based SRAM cells with simultaneous and independent driven gates. - V. N. Ramakrishnan; R. Srinivasan (Microelectron. J., 2012)

A 2D Transconductance and Sub-threshold behavior model for triple material surrounding gate (TMSG) MOSFETs. - P. Suveetha Dhanaselvam; N. B. Balamurugan; V. N. Ramakrishnan (Microelectron. J., 2013)

Topological variation on sub-20 nm double-gate inversion and Junctionless-FinFET based 6T-SRAM circuits and its SEU radiation performance. - S. Nilamani; P. Chitra; V. N. Ramakrishnan (Microelectron. Reliab., 2018)

An Optimized Vertical GaN Parallel Split Gate Trench MOSFET Device Structure for Improved Switching Performance. - Nilesh Kumar Jaiswal; V. N. Ramakrishnan (IEEE Access, 2023)