Single event effects and total ionising dose in 600V Si-on-SiC LDMOS transistors for rad-hard space applications. - K. Ben Ali; P. M. Gammon; C. W. Chan; F. Li; V. Pathirana; T. Trajkovic; Farzan Gity; Denis Flandre; Valeria Kilchytska (ESSDERC, 2017)

Impact of underfill and other physical dimensions on Silicon Lateral IGBT package reliability using computer model with discrete and continuous design variables. - Pushparajah Rajaguru; H. Lu; Chris Bailey 001; Alberto Castellazzi; V. Pathirana; N. Udugampola; Florin Udrea (Microelectron. Reliab., 2018)