Charge trapping and degradation in Ge+ ion implanted SiO2 layers during high-field electron injection. - A. N. Nazarov; I. N. Osiyuk; V. S. Lysenko; T. Gebel; Lars Rebohle; W. Skorupa (Microelectron. Reliab., 2002)

Charge storage peculiarities in poly-Si-SiO2-Si memory devices with Si nanocrystals rich SiO2. - V. I. Turchanikov; A. N. Nazarov; V. S. Lysenko; Josep Carreras; B. Garrido (Microelectron. Reliab., 2005)

Charge trapping and interface states in hydrogen annealed HfO2-Si structures. - Y. V. Gomeniuk; A. N. Nazarov; Ya. N. Vovk; V. S. Lysenko; Yi Lu; Octavian Buiu; Steve Hall; R. J. Potter; Paul R. Chalker (Microelectron. Reliab., 2007)

Charge accumulation in the dielectric of the nanocluster NVM MOS structures under anti- and unipolar W/E window formation. - V. I. Turchanikov; A. N. Nazarov; V. S. Lysenko; V. Ostahov; O. Winkler; B. Spangenberg; H. Kurz (Microelectron. Reliab., 2007)

Charge trapping characterization of MOCVD HfO2/p-Si interfaces at cryogenic temperatures. - I. P. Tyagulskyy; I. N. Osiyuk; V. S. Lysenko; A. N. Nazarov; Steve Hall; Octavian Buiu; Y. Lu; Richard Potter; Paul R. Chalker (Microelectron. Reliab., 2007)