Use of preliminary ultraviolet and infrared illumination for diagnostics of MOS and bipolar devices radiation response. - V. S. Pershenkov; S. V. Avdeev; A. S. Tsimbalov; M. N. Levin; V. V. Belyakov; D. V. Ivashin; A. Y. Slesarev; A. Y. Bashin; Gennady I. Zebrev; Viktor N. Ulimov (Microelectron. Reliab., 2002)

X-ray ion mobility spectrometer. - V. S. Pershenkov; A. D. Tremasov; V. V. Belyakov; A. U. Razvalyaev; V. S. Mochkin (Microelectron. Reliab., 2006)

ELDRS in SiGe transistors for room and low-temperature irradiation. - V. S. Pershenkov; Alexander S. Bakerenkov; V. A. Felitsyn; A. S. Rodin; V. A. Telets; V. V. Belyakov (Microelectron. Reliab., 2016)

True dose rate physical mechanism of ELDRS effect in bipolar devices. - V. S. Pershenkov; Aleksandr S. Petrov; Alexander S. Bakerenkov; Viktor N. Ulimov; V. A. Felytsyn; A. S. Rodin; V. V. Belyakov; V. A. Telets; V. V. Shurenkov (Microelectron. Reliab., 2017)