Impact of the electron, proton and helium irradiation on the forward I-V characteristics of high-power P-i-N diode. - J. Vobecký; Pavel Hazdra; V. Záhlava (Microelectron. Reliab., 2003)

Doping compensation for increased robustness of fast recovery silicon diodes. - J. Vobecký; V. Záhlava; V. Komarnitskyy (Microelectron. Reliab., 2010)

Molybdenum and low-temperature annealing of a silicon power P-i-N diode. - J. Vobecký; V. Komarnitskyy; V. Záhlava (Microelectron. Reliab., 2011)

Operation of 4H-SiC high voltage normally-OFF V-JFET in radiation hard conditions: Simulations and experiment. - Stanislav Popelka 002; Pavel Hazdra; V. Záhlava (Microelectron. Reliab., 2017)