Study of HeavyIon Irradiation Effects in FinFETs at Sub-5 nm Technology Node: Reliability Perspective. - Sresta Valasa; Venkata Ramakrishna Kotha; Sunitha Bhukya; Vadthya Bheemudu; Shubham Tayal; Vadthiya Narendar (VDAT, 2024)

Design insights into a junctionless nanosheet FET (JL-NSFET) for switching and Analog/RF applications: Device to circuit level assessment. - Vadthya Bheemudu; Vaithiyanathan Dhandapani; Baljit Kaur (Microelectron. J., 2024)