Harmonic distortion analysis using an improved charge sheet model for PD SOI MOSFETs. - Joaquín Alvarado; Antonio Cerdeira; Valeria Kilchytska; Denis Flandre (Microelectron. J., 2007)

Compact model for single event transients and total dose effects at high temperatures for partially depleted SOI MOSFETs. - Joaquín Alvarado; El Hafed Boufouss; Valeria Kilchytska; Denis Flandre (Microelectron. Reliab., 2010)

Characterization and modelling of single event transients in LDMOS-SOI FETs. - Joaquín Alvarado; Valeria Kilchytska; El Hafed Boufouss; Denis Flandre (Microelectron. Reliab., 2011)

Impact of neutron irradiation on the RF properties of oxidized high-resistivity silicon substrates with and without a trap-rich passivation layer. - C. Roda Neve; Valeria Kilchytska; Joaquín Alvarado; Dimitri Lederer; O. Militaru; Denis Flandre; Jean-Pierre Raskin (Microelectron. Reliab., 2011)

On the UTBB SOI MOSFET performance improvement in quasi-double-gate regime. - Valeria Kilchytska; Denis Flandre; François Andrieu (ESSDERC, 2012)

High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs. - Valeria Kilchytska; Joaquín Alvarado; S. Put; Nadine Collaert; Eddy Simoen; Cor Claeys; Otilia Militaru; Guy Berger; Denis Flandre (Microelectron. Reliab., 2012)

Threshold voltage extraction techniques and temperature effect in context of global variability in UTBB mosfets. - Sergej Makovejev; Babak Kazemi Esfeh; Jean-Pierre Raskin; Denis Flandre; Valeria Kilchytska; François Andrieu (ESSDERC, 2013)

Ultra-Low Power High Temperature and Radiation Hard Complementary Metal-Oxide-Semiconductor (CMOS) Silicon-on-Insulator (SOI) Voltage Reference. - El Hafed Boufouss; Laurent A. Francis; Valeria Kilchytska; Pierre Gérard; Pascal Simon; Denis Flandre (Sensors, 2013)

Variability of UTBB MOSFET analog figures of merit in wide frequency range. - Sergej Makovejev; Babak Kazemi Esfeh; Jean-Pierre Raskin; Valeria Kilchytska; Denis Flandre; Vincent Barral; Nicolas Planes; Michel Haond (ESSDERC, 2014)

Single event effects and total ionising dose in 600V Si-on-SiC LDMOS transistors for rad-hard space applications. - K. Ben Ali; P. M. Gammon; C. W. Chan; F. Li; V. Pathirana; T. Trajkovic; Farzan Gity; Denis Flandre; Valeria Kilchytska (ESSDERC, 2017)

Back-gate bias effect on UTBB-FDSOI non-linearity performance. - B. Kazemi Esfeh; Valeria Kilchytska; Bertrand Parvais; Nicolas Planes; M. Haond; Denis Flandre; Jean-Pierre Raskin (ESSDERC, 2017)

Self-Heating in 28 FDSOI UTBB MOSFETs at Cryogenic Temperatures. - Lucas Nyssens; Arka Halder; Babak Kazemi Esfeh; Nicolas Planes; Michel Haond; Denis Flandre; Jean-Pierre Raskin; Valeriya Kilchytska (ESSDERC, 2019)