Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress. - Valerio Di Lecce; Michele Esposto; Matteo Bonaiuti; Gaudenzio Meneghesso; Enrico Zanoni; Fausto Fantini; Alessandro Chini (Microelectron. Reliab., 2010)

DC and small-signal numerical simulation of graphene base transistor for terahertz operation. - Valerio Di Lecce; Roberto Grassi; Antonio Gnudi; Elena Gnani; Susanna Reggiani; Giorgio Baccarani (ESSDERC, 2013)

Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation. - Valerio Di Lecce; Roberto Grassi; Antonio Gnudi; Elena Gnani; Susanna Reggiani; Giorgio Baccarani (ESSDERC, 2014)