Origins and implications of increased channel hot carrier variability in nFinFETs. - Ben Kaczer; Jacopo Franco; M. Cho; Tibor Grasser; Philippe J. Roussel; Stanislav Tyaginov; M. Bina; Yannick Wimmer; Luis-Miguel Procel; Lionel Trojman; Felice Crupi; Gregory Pitner; et al. (IRPS, 2015)

Impact of slow and fast oxide traps on In0.53Ga0.47As device operation studied using CET maps. - Vamsi Putcha; Jacopo Franco; Abhitosh Vais; Ben Kaczer; S. Sioncke; Dimitri Linten; Guido Groeseneken (IRPS, 2018)

A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability. - Ben Kaczer; Jacopo Franco; Pieter Weckx; Philippe Roussel; Vamsi Putcha; Erik Bury; Marko Simicic; Adrian Vaisman Chasin; Dimitri Linten; Bertrand Parvais; Francky Catthoor; Gerhard Rzepa; et al. (Microelectron. Reliab., 2018)

Exploring the DC reliability metrics for scaled GaN-on-Si devices targeted for RF/5G applications. - Vamsi Putcha; Erik Bury; Jacopo Franco; Amey Walke; Simeng Zhao; Uthayasankaran Peralagu; Ming Zhao; AliReza Alian; Ben Kaczer; Niamh Waldron; Dimitri Linten; Bertrand Parvais; et al. (IRPS, 2020)

On the impact of buffer and GaN-channel thickness on current dispersion for GaN-on-Si RF/mmWave devices. - Vamsi Putcha; Liang Cheng; AliReza Alian; Ming Zhao; Hai Lu; Bertrand Parvais; Niamh Waldron; Dimitri Linten; Nadine Collaert (IRPS, 2021)

Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer. - AliReza Alian; Raúl Rodríguez; Sachin Yadav 001; Uthayasankaran Peralagu; Arturo Sibaja Hernandez; Vamsi Putcha; Ming Zhao; Rana Y. El Kashlan; Bjorn Vermeersch; Hao Yu; Erik Bury; Ahmad Khaled; et al. (ESSDERC, 2022)

Modelling ultra-fast threshold voltage instabilities in Hf-based ferroelectrics. - Barry J. O'Sullivan; Brecht Truijen; Vamsi Putcha; Alexander Grill; Adrian Vaisman Chasin; Geert Van den Bosch; Ben Kaczer; Md Nur K. Alam; Jan Van Houdt (IRPS, 2022)

Interpretation and modelling of dynamic-RON kinetics in GaN-on-Si HEMTs for mm-wave applications. - Vamsi Putcha; Hao Yu; Jacopo Franco; Sachin Yadav 001; AliReza Alian; Uthayasankaran Peralagu; Bertrand Parvais; Nadine Collaert (IRPS, 2022)