Bias Temperature Instability Reliability in Stacked Gate-All-Around Nanosheet Transistor. - Miaomiao Wang 006; Jingyun Zhang; Huimei Zhou; Richard G. Southwick; Robin Hsin Kuo Chao; Xin Miao; Veeraraghavan S. Basker; Tenko Yamashita; Dechao Guo; Gauri Karve; Huiming Bu; James H. Stathis (IRPS, 2019)

A new technique for evaluating stacked nanosheet inner spacer TDDB reliability. - Tian Shen; Koji Watanabe; Huimei Zhou; Michael Belyansky; Erin Stuckert; Jingyun Zhang; Andrew Greene; Veeraraghavan S. Basker; Miaomiao Wang 006 (IRPS, 2020)

TDDB Reliability in Gate-All-Around Nanosheet. - Huimei Zhou; Miaomiao Wang 006; Ruqiang Bao; Tian Shen; Ernest Y. Wu; Richard G. Southwick; Jingyun Zhang; Veeraraghavan S. Basker; Dechao Guo (IRPS, 2021)