Universal MOSFET hole mobility degradation models for circuit simulation. - Victor Martin Agostinelli Jr.; Gregory Munson Yeric; A. F. Tasch Jr. (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1993)

Improved universal MOSFET electron mobility degradation models for circuit simulation. - C. Patrick Yue; Victor Martin Agostinelli Jr.; Gregory Munson Yeric; A. F. Tasch Jr. (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1993)