Experimental analysis of planar edge terminations for high voltage 4H-SiC devices. - Victor Soler; Maxime Berthou; Andrei Mihaila; Josep Montserrat; Philippe Godignon; José Rebollo; José Millán (ESSDERC, 2015)

Power cycling analysis method for high-voltage SiC diodes. - Viorel Banu; Victor Soler; Josep Montserrat; José Millán; Philippe Godignon (Microelectron. Reliab., 2016)

High-Voltage 4H-SiC Power MOSFETs With Boron-Doped Gate Oxide. - Victor Soler; Maria Cabello; Maxime Berthou; Josep Montserrat; José Rebollo; Philippe Godignon; Andrei Mihaila; Maria R. Rogina; Alberto Rodriguez 001; Javier Sebastián (IEEE Trans. Ind. Electron., 2017)