Use of preliminary ultraviolet and infrared illumination for diagnostics of MOS and bipolar devices radiation response. - V. S. Pershenkov; S. V. Avdeev; A. S. Tsimbalov; M. N. Levin; V. V. Belyakov; D. V. Ivashin; A. Y. Slesarev; A. Y. Bashin; Gennady I. Zebrev; Viktor N. Ulimov (Microelectron. Reliab., 2002)

Some features of degradation in bipolar transistors at different test conditions for total ionizing dose effect. - Aleksandr S. Petrov; Viktor N. Ulimov (Microelectron. Reliab., 2012)

Influence of temperature and dose rate on the degradation of BiCMOS operational amplifiers during total ionizing dose testing. - Aleksandr S. Petrov; Konstantin I. Tapero; Viktor N. Ulimov (Microelectron. Reliab., 2014)

True dose rate physical mechanism of ELDRS effect in bipolar devices. - V. S. Pershenkov; Aleksandr S. Petrov; Alexander S. Bakerenkov; Viktor N. Ulimov; V. A. Felytsyn; A. S. Rodin; V. V. Belyakov; V. A. Telets; V. V. Shurenkov (Microelectron. Reliab., 2017)

Impact of elevated temperature applied during low dose rate irradiation on the degradation of BiCMOS operational amplifiers. - Aleksandr S. Petrov; Konstantin I. Tapero; Viktor N. Ulimov; A. M. Chlenov (Microelectron. Reliab., 2018)