Quantum Correction to the Semiclassical Electron-Phonon Scattering Operator. - Viktor Sverdlov; Hans Kosina; Christian A. Ringhofer; Mihail Nedjalkov; Siegfried Selberherr (LSSC, 2005)

Monte Carlo Algorithm for Mobility Calculations in Thin Body Field Effect Transistors: Role of Degeneracy and Intersubband Scattering. - Viktor Sverdlov; Enzo Ungersboeck; Hans Kosina (LSSC, 2007)

Modeling current transport in ultra-scaled field-effect transistors. - Viktor Sverdlov; Hans Kosina; Siegfried Selberherr (Microelectron. Reliab., 2007)

Biotin-Streptavidin Sensitive BioFETs and Their Properties. - Thomas Windbacher; Viktor Sverdlov; Siegfried Selberherr (BIOSTEC (Selected Papers), 2009)

Study of the Properties of Biotin-streptavidin Sensitive BioFETs. - Thomas Windbacher; Viktor Sverdlov; Siegfried Selberherr; Clemens Heitzinger; Norbert J. Mauser; Christian A. Ringhofer (BIODEVICES, 2009)

Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models. - M. Vasicek; Viktor Sverdlov; Johann Cervenka; Tibor Grasser; Hans Kosina; Siegfried Selberherr (LSSC, 2009)

Impact of O-Si-O bond angle fluctuations on the Si-O bond-breakage rate. - Stanislav Tyaginov; Viktor Sverdlov; Ivan A. Starkov; Wolfgang Gös; Tibor Grasser (Microelectron. Reliab., 2009)

Modeling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simulations. - Alexander Makarov; Viktor Sverdlov; Siegfried Selberherr (NMA, 2010)

Efficient Simulations of the Transport Properties of Spin Field-Effect Transistors Built on Silicon Fins. - Dmitry Osintsev; Alexander Makarov; Viktor Sverdlov; Siegfried Selberherr (LSSC, 2011)

MTJ-based implication logic gates and circuit architecture for large-scale spintronic stateful logic systems. - Hiwa Mahmoudi; Viktor Sverdlov; Siegfried Selberherr (ESSDERC, 2012)

Emerging memory technologies: Trends, challenges, and modeling methods. - Alexander Makarov; Viktor Sverdlov; Siegfried Selberherr (Microelectron. Reliab., 2012)

Reduction of momentum and spin relaxation rate in strained thin silicon films. - Dmitry Osintsev; Viktor Sverdlov; Siegfried Selberherr (ESSDERC, 2013)

MRAM-based logic array for large-scale non-volatile logic-in-memory applications. - Hiwa Mahmoudi; Thomas Windbacher; Viktor Sverdlov; Siegfried Selberherr (NANOARCH, 2013)

Novel MTJ-based shift register for non-volatile logic applications. - Thomas Windbacher; Hiwa Mahmoudi; Viktor Sverdlov; Siegfried Selberherr (NANOARCH, 2013)

Compact modeling of memristive IMP gates for reliable stateful logic design. - Hiwa Mahmoudi; Thomas Windbacher; Viktor Sverdlov; Siegfried Selberherr (MIXDES, 2014)

Magnetic tunnel junctions for future memory and logic-in-memory applications. - Viktor Sverdlov; Hiwa Mahmoudi; Alexander Makarov; Siegfried Selberherr (MIXDES, 2014)

Evaluation of Spin Lifetime in Thin-Body FETs: A High Performance Computing Approach. - Joydeep Ghosh; Dmitry Osintsev; Viktor Sverdlov; Josef Weinbub; Siegfried Selberherr (LSSC, 2015)

Spin-Based CMOS-Compatible Devices. - Viktor Sverdlov; Siegfried Selberherr (LSSC, 2015)

SOT-MRAM based on 1Transistor-1MTJ-cell structure. - Alexander Makarov; Thomas Windbacher; Viktor Sverdlov; Siegfried Selberherr (NVMTS, 2015)

The exploitation of magnetization orientation encoded spin-transfer torque for an ultra dense non-volatile magnetic shift register. - Thomas Windbacher; Alexander Makarov; Viktor Sverdlov; Siegfried Selberherr (ESSDERC, 2016)

Switching Speedup of the Magnetic Free Layer of Advanced SOT-MRAM. - Roberto Lacerda de Orio; Alexander Makarov; Siegfried Selberherr; Wolfgang Goes; Johannes Ender; Simone Fiorentini; Viktor Sverdlov (ESSDERC, 2019)

A Monte Carlo Evaluation of the Current and Low Frequency Current Noise at Spin-Dependent Hopping. - Viktor Sverdlov; Siegfried Selberherr (LSSC, 2019)

Subband Structure and Ballistic Conductance of a Molybdenum Disulfide Nanoribbon in Topological 1T' Phase: A k·p Study. - Viktor Sverdlov; Al-Moatasem Bellah El-Sayed; Siegfried Selberherr (MIXDES, 2020)

Finite Element Method Approach to MRAM Modeling. - Mario Bendra; Johannes Ender; Simone Fiorentini; T. Hadámek; Roberto Lacerda de Orio; Wolfgang Goes; Viktor Sverdlov; Siegfried Selberherr (MIPRO, 2021)

Spin Torques in ULTRA-Scaled MRAM Devices. - Simone Fiorentini; Mario Bendra; Johannes Ender; Roberto Lacerda de Orio; Wolfgang Goes; Siegfried Selberherr; Viktor Sverdlov (ESSDERC, 2022)

Spin Transfer Torques in Ultra-Scaled MRAM Cells. - Mario Bendra; Simone Fiorentini; Johannes Ender; R. L. de Orio; T. Hadámek; W. J. Loch; Nils Petter Jørstad; Siegfried Selberherr; Wolfgang Goes; Viktor Sverdlov (MIPRO, 2022)

Charge and Spin Transport in Semiconductor Devices. - Viktor Sverdlov; Siegfried Selberherr (ASICON, 2023)

Comprehensive Modeling of Advanced Composite Magnetoresistive Devices. - Viktor Sverdlov; Mario Bendra; Bernhard Pruckner; Simone Fiorentini; Wolfgang Goes; Siegfried Selberherr (ESSDERC, 2023)

Towards Efficient SOT-Assisted STT-MRAM Cell Switching Using Reinforcement Learning. - Johannes Ender; Roberto Lacerda de Orio; Wolfgang Gös; Viktor Sverdlov (LSSC, 2023)

Back-Hopping in Ultra-Scaled MRAM Cells. - Mario Bendra; Simone Fiorentini; Johannes Ender; R. L. de Orio; T. Hadámek; Nils Petter Jørstad; Bernhard Pruckner; Siegfried Selberherr; Wolfgang Goes; Viktor Sverdlov (MIPRO, 2023)

Advancing Nonvolatile Memory Technologies: Enhancing Reliability and Performance through Double Spin Torque Magnetic Tunnel Junctions and Interlayer Exchange Coupling. - Mario Bendra; Bernhard Pruckner; R. L. de Orio; Siegfried Selberherr; Wolfgang Goes; Viktor Sverdlov (DRC, 2024)

Influence of Interface Exchange Coupling in Multilayered Spintronic Structures. - Mario Bendra; R. L. de Orio; Siegfried Selberherr; Wolfgang Goes; Viktor Sverdlov (MIPRO, 2024)

Field-Free Perpendicular Magnetization Switching of SOT-MRAM Devices by Magnetic Spin Hall Effect. - Bernhard Pruckner; Nils Petter Jørstad; T. Hadámek; Wolfgang Goes; Siegfried Selberherr; Viktor Sverdlov (MIPRO, 2024)