A 50nm 8Gb NAND Flash Memory with 100MB/s Program Throughput and 200MB/s DDR Interface. - Dean Nobunaga; Ebrahim Abedifard; Frankie Roohparvar; June Lee; Erwin Yu; Allahyar Vahidimowlavi; Michael Abraham; Sanjay Talreja; Rajesh Sundaram; Rod Rozman; Luyen Vu; Chih-Liang Chen; et al. (ISSCC, 2008)

19.1 A 128Gb MLC NAND-Flash device using 16nm planar cell. - Mark Helm; Jae-Kwan Park; Ali Ghalam; Jason Guo; Chang-Wan Ha; Cairong Hu; Heonwook Kim; Kalyan Kavalipurapu; Eric Lee; Ali Mohammadzadeh; Dan Nguyen; Vipul Patel; et al. (ISSCC, 2014)