Charge transfer speed analysis in pinned photodiode CMOS image sensors based on a pulsed storage-gate method. - Alice Pelamatti; Vincent Goiffon; Aziouz Chabane; Pierre Magnan; Cédric Virmontois; Olivier Saint-Pé; Michel Breart de Boisanger (ESSDERC, 2015)

Dark Current Limiting Mechanisms in CMOS Image Sensors. - Dan McGrath; Steve Tobin; Vincent Goiffon; Pierre Magnan; Alexandre Le Roch (IMSE, 2018)

Plasma Antenna Charging in CMOS Image Sensors. - Yolène Sacchettini; Jean-Pierre Carrère; Vincent Goiffon; Pierre Magnan (IRPS, 2019)

Random Telegraph Noises from the Source Follower, the Photodiode Dark Current, and the Gate-Induced Sense Node Leakage in CMOS Image Sensors. - Calvin Yi-Ping Chao; Shang-Fu Yeh; Meng-Hsu Wu; Kuo-Yu Chou; Honyih Tu; Chih-Lin Lee; Chin Yin; Philippe Paillet; Vincent Goiffon (Sensors, 2019)

Leakage Current Non-Uniformity and Random Telegraph Signals in CMOS Image Sensor Floating Diffusions Used for In-Pixel Charge Storage. - Alexandre Le Roch; Vincent Goiffon; Olivier Marcelot; Philippe Paillet; Federico Pace; Jean-Marc Belloir; Pierre Magnan; Cédric Virmontois (Sensors, 2019)

CMOS Image Sensors and Plasma Processes: How PMD Nitride Charging Acts on the Dark Current. - Yolène Sacchettini; Jean-Pierre Carrère; Romain Duru; Jean-Pierre Oddou; Vincent Goiffon; Pierre Magnan (Sensors, 2019)

Automatic Detection and Correction of Random Telegraph Signal Artifacts in Earth Observation Images. - Sylvain Lucas; Thomas Oberlin; Vincent Goiffon; Fanny Le Mer (IEEE Geosci. Remote. Sens. Lett., 2022)

Quantum efficiency of backside-illuminated pixels under ultraviolet illumination: ARC coatings impact measurements and simulations. - Nour Fassi; Jean-Pierre Carrère; Pierre Magnan; Magali Estribeau; Vincent Goiffon (Imaging Sensors and Systems, 2023)

Evaluation of Microlenses, Color Filters, and Polarizing Filters in CIS for Space Applications. - Clémentine Durnez; Cédric Virmontois; Pierre Panuel; Aubin Antonsanti; Vincent Goiffon; Magali Estribeau; Olivier Saint-Pé; Valérian Lalucaa; Erick Berdin; Franck Larnaudie; Jean-Marc Belloir; Catalin Codreanu; et al. (Sensors, 2023)

Development of a Charge-Multiplication CMOS Image Sensor Based on Capacitive Trench for Low-Light-Level Imaging. - Olivier Marcelot; Marjorie Morvan; Antoine Salih Alj; Stephane Demiguel; Cédric Virmontois; Anne Rouvié; Magali Estribeau; Vincent Goiffon (Sensors, 2023)

Effect of Metallic Ion Implantation on Dark Current Distributions of Silicon-Based CMOS Image Sensors. - Juan Esteban Montoya Cardona; Sylvain Joblot; Pierre Kermagoret; Grégoire Ducotey; Stéphane Hardillier; Guillaume Dupeux; Yannick Borde; Jean-Pierre Carrère; Sandrine Lhostis; Richard Monflier; Olivier Marcelot; Vincent Goiffon (IEEE SENSORS, 2024)

Design Techniques Evaluation to Mitigate RTS Noise Effect in Column ADC of 3D Stacked Image Sensors. - M. Gouveia da Cunha; Sébastien Place; O. Gauthier; N. Virollet; M. Vignetti; Philippe Martin-Gonthier; Pierre Magnan; Vincent Goiffon (IRPS, 2024)

Radiation Damage on Silicon Photomultipliers from Ionizing and Non-Ionizing Radiation of Low-Earth Orbit Operations. - Stefano Merzi; Fabio Acerbi; Corinne Aicardi; Daniela Fiore; Vincent Goiffon; Alberto Giacomo Gola; Olivier Marcelot; Alex Materne; Olivier Saint-Pé (Sensors, 2024)