On the role of holes in oxide breakdown mechanism in inverted nMOSFETs. - Frederic Monsieur; E. Vincent; Vincent Huard; S. Bruyère; David Roy 001; Thomas Skotnicki; G. Pananakakis; Gérard Ghibaudo (Microelectron. Reliab., 2003)

New insights into the change of voltage acceleration and temperature activation of oxide breakdown. - G. Ribes; S. Bruyère; Frederic Monsieur; David Roy 001; Vincent Huard (Microelectron. Reliab., 2003)

Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs. - Alain Bravaix; Didier Goguenheim; Mickael Denais; Vincent Huard; C. R. Parthasarathy; F. Perrier; Nathalie Revil; E. Vincent (Microelectron. Reliab., 2005)

A thorough investigation of MOSFETs NBTI degradation. - Vincent Huard; Mickael Denais; F. Perrier; Nathalie Revil; C. R. Parthasarathy; Alain Bravaix; E. Vincent (Microelectron. Reliab., 2005)

Multi-vibrational hydrogen release: Physical origin of Tbd, Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides. - G. Ribes; S. Bruyère; Mickael Denais; Frederic Monsieur; Vincent Huard; David Roy 001; Gérard Ghibaudo (Microelectron. Reliab., 2005)

NBTI degradation: From physical mechanisms to modelling. - Vincent Huard; Mickael Denais; C. R. Parthasarathy (Microelectron. Reliab., 2006)

Designing in reliability in advanced CMOS technologies. - C. R. Parthasarathy; Mickael Denais; Vincent Huard; G. Ribes; David Roy 001; Chloe Guérin; F. Perrier; E. Vincent; Alain Bravaix (Microelectron. Reliab., 2006)

Design-In Reliability for 90-65nm CMOS Nodes Submitted to Hot-Carriers and NBTI Degradation. - C. R. Parthasarathy; Alain Bravaix; Chloe Guérin; Mickael Denais; Vincent Huard (PATMOS, 2007)

Bottom-up digital system-level reliability modeling. - N. Ruiz Amador; Vincent Huard; E. Pion; Florian Cacho; Damien Croain; V. Robert; Sylvain Engels; Philippe Flatresse; Lorena Anghel (CICC, 2011)

A bottom-up approach for System-On-Chip reliability. - Vincent Huard; N. Ruiz Amador; Florian Cacho; E. Pion (Microelectron. Reliab., 2011)

Microscopic scale characterization and modeling of transistor degradation under HC stress. - Yoann Mamy Randriamihaja; Vincent Huard; Xavier Federspiel; Alban Zaka; Pierpaolo Palestri; Denis Rideau; David Roy 001; Alain Bravaix (Microelectron. Reliab., 2012)

Timing in-situ monitors: Implementation strategy and applications results. - Ahmed Benhassain; Florian Cacho; Vincent Huard; M. Saliva; Lorena Anghel; C. R. Parthasarathy; Abhishek Jain 003; Fabien Giner (CICC, 2015)

Digital circuits reliability with in-situ monitors in 28nm fully depleted SOI. - M. Saliva; Florian Cacho; Vincent Huard; X. Federspiel; D. Angot; Ahmed Benhassain; Alain Bravaix; Lorena Anghel (DATE, 2015)

Physical understanding of low frequency degradation of NMOS TDDB in High-k metal gate stack-based technology. Implication on lifetime assessment. - A. Bezza; M. Rafik; David Roy 001; X. Federspiel; P. Mora; Cheikh Diouf; Vincent Huard; Gérard Ghibaudo (IRPS, 2015)

Workload-dependent BTI analysis in a processor core at high level. - Olivier Héron; Chiara Sandionigi; E. Piriou; Safa Mbarek; Vincent Huard (IRPS, 2015)

From BTI variability to product failure rate: A technology scaling perspective. - Vincent Huard; D. Angot; Florian Cacho (IRPS, 2015)

28nm UTBB FDSOI product reliability/performance trade-off optimization through body bias operation. - P. Mora; X. Federspiel; Florian Cacho; Vincent Huard; Wafa Arfaoui (IRPS, 2015)

Impact of gate oxide breakdown in logic gates from 28nm FDSOI CMOS technology. - M. Saliva; Florian Cacho; Cheikh Ndiaye; Vincent Huard; D. Angot; Alain Bravaix; Lorena Anghel (IRPS, 2015)

Early failure prediction by using in-situ monitors: Implementation and application results. - Ahmed Benhassain; Florian Cacho; Vincent Huard; Lorena Anghel (ERMAVSS@DATE, 2016)

Study of workload impact on BTI HCI induced aging of digital circuits. - Ajith Sivadasan; Florian Cacho; Sidi Ahmed Benhassain; Vincent Huard; Lorena Anghel (DATE, 2016)

Workload Impact on BTI HCI Induced Aging of Digital Circuits: A System level Analysis. - Ajith Sivadasan; Florian Cacho; Sidi Ahmed Benhassain; Vincent Huard; Lorena Anghel (ERMAVSS@DATE, 2016)

Hot-carrier and BTI damage distinction for high performance digital application in 28nm FDSOI and 28nm LP CMOS nodes. - Alain Bravaix; M. Saliva; Florian Cacho; X. Federspiel; Cheikh Ndiaye; Souhir Mhira; Edith Kussener; E. Pauly; Vincent Huard (IOLTS, 2016)

Activity profiling: Review of different solutions to develop reliable and performant design. - Florian Cacho; Ahmed Benhassain; Souhir Mhira; Ajith Sivadasan; Vincent Huard; P. Cathelin; Vincent Knopik; Abhishek Jain 003; C. R. Parthasarathy; Lorena Anghel (IOLTS, 2016)

In-situ slack monitors: taking up the challenge of on-die monitoring of variability and reliability. - Ahmed Benhassain; Souhir Mhira; Florian Cacho; Vincent Huard; Lorena Anghel (IVSW, 2016)

28nm FDSOI technology sub-0.6V SRAM Vmin assessment for ultra low voltage applications. - Rossella Ranica; Nicolas Planes; Vincent Huard; Olivier Weber; Daniel Noblet; Damien Croain; Fabien Giner; Sylvie Naudet; P. Mergault; S. Ibars; A. Villaret; Maryline Parra; et al. (VLSI Circuits, 2016)

Early system failure prediction by using aging in situ monitors: Methodology of implementation and application results. - Lorena Anghel; Ahmed Benhassain; Ajith Sivadasan; Florian Cacho; Vincent Huard (VTS, 2016)

Potentiality of healing techniques in hot-carrier damaged 28 nm FDSOI CMOS nodes. - Alain Bravaix; Florian Cacho; X. Federspiel; Cheikh Ndiaye; Souhir Mhira; Vincent Huard (Microelectron. Reliab., 2016)

Performance vs. reliability adaptive body bias scheme in 28 nm & 14 nm UTBB FDSOI nodes. - Cheikh Ndiaye; Vincent Huard; X. Federspiel; Florian Cacho; Alain Bravaix (Microelectron. Reliab., 2016)

Workload dependent reliability timing analysis flow. - Ajith Sivadasan; Armelle Notin; Vincent Huard; Etienne Maurin; Souhir Mhira; Florian Cacho; Lorena Anghel (DATE, 2017)

Investigation of critical path selection for in-situ monitors insertion. - Florian Cacho; Ahmed Benhassain; Riddhi Jitendrakumar Shah; Souhir Mhira; Vincent Huard; Lorena Anghel (IOLTS, 2017)

Dynamic aging compensation and Safety measures in Automotive environment. - Souhir Mhira; Vincent Huard; Ahmed Benhassain; Florian Cacho; Sylvie Naudet; Abhishek Jain 003; C. R. Parthasarathy; Alain Bravaix (IOLTS, 2017)

Cognitive approach to support dynamic aging compensation. - Souhir Mhira; Vincent Huard; Ahmed Benhassain; Florian Cacho; David Meyer; Sylvie Naudet; Abhishek Jain 003; C. R. Parthasarathy; Alain Bravaix (ITC, 2017)

Enabling robust automotive electronic components in advanced CMOS nodes. - Vincent Huard; Souhir Mhira; Florian Cacho; Alain Bravaix (Microelectron. Reliab., 2017)

Characterization of Low Drop-Out during ageing and design for yield. - R. Lajmi; Florian Cacho; Estelle Lauga-Larroze; Sylvain Bourdel; Ph. Benech; Vincent Huard; X. Federspiel (Microelectron. Reliab., 2017)

NBTI aged cell rejuvenation with back biasing and resulting critical path reordering for digital circuits in 28nm FDSOI. - Ajith Sivadasan; Riddhi Jitendrakumar Shah; Vincent Huard; Florian Cacho; Lorena Anghel (DATE, 2018)

Modeling self-heating effects in advanced CMOS nodes. - M. Arabi; A. Cros; X. Federspiel; Cheikh Ndiaye; Vincent Huard; M. Rafik (IRPS, 2018)

A new method for quickly evaluating reversible and permanent components of the BTI degradation. - Xavier Garros; Alexandre Subirats; Gilles Reimbold; Fred Gaillard; Cheikh Diouf; X. Federspiel; Vincent Huard; M. Rafik (IRPS, 2018)

Managing electrical reliability in consumer systems for improved energy efficiency. - Vincent Huard; Souhir Mhira; A. Barclais; X. Lecocq; F. Raugi; M. Cantournet; Alain Bravaix (IRPS, 2018)

Key parameters driving transistor degradation in advanced strained SiGe channels. - Vincent Huard; Cheikh Ndiaye; M. Arabi; Narendra Parihar; X. Federspiel; Souhir Mhira; S. Mahapatra; Alain Bravaix (IRPS, 2018)

Resilient automotive products through process, temperature and aging compensation schemes. - Souhir Mhira; Vincent Huard; D. Arora; Philippe Flatresse; Alain Bravaix (IRPS, 2018)

Investigation of speed sensors accuracy for process and aging compensation. - Riddhi Jitendrakumar Shah; Florian Cacho; Vincent Huard; Souhir Mhira; D. Arora; Pankaj Agarwal; Shubham Kumar; S. Balaraman; Bijoy Kumar Singh; Lorena Anghel (IRPS, 2018)

Industrial best practice: cases of study by automotive chip- makers. - L. Degli Abbati; Rudolf Ullmann; G. Paganini; M. Coppetta; L. Zaia; Vincent Huard; O. Montfort; Riccardo Cantoro; Giorgio Insinga; F. Venini; P. Calao; Paolo Bernardi (DFT, 2021)

A 0.021mm2 PVT-Aware Digital-Flow-Compatible Adaptive Back-Biasing Regulator with Scalable Drivers Achieving 450% Frequency Boosting and 30% Power Reduction in 22nm FDSOI Technology. - Yasser Moursy; Thiago Raupp da Rosa; Lionel Jure; Anthony Quelen; Sébastien Genevey; Lionel Pierrefeu; Emmanuel G. Collins Jr.; Joerg Winkler; Jonathan Park; Gaël Pillonnet; Vincent Huard; Andrea Bonzo; et al. (ISSCC, 2021)

Runtime Test Solution for Adaptive Aging Compensation and Fail Operational Safety mode. - Vincent Huard; Francois Jacquet; Souhir Mhira; Lionel Jure; Olivier Montfort; Mathieu Louvat; L. Zaia; F. Bertrand; E. Acacia; O. Caffin; H. Belhadj; O. Durand; et al. (IRPS, 2022)

Correlation Technologies for OTA Testing of mmWave Mobile Devices Using Energy Metrics. - Sidina Wane; T. V. Dinh; Q. H. Tran; Damienne Bajon; F. Ferrero; Lionel Duvillaret; Gwenaël Gaborit; Jacques Sombrin; E. de Lédinghen; P. Laban; Vincent Huard; Souhir Mhira; et al. (RWS, 2022)

Embracing the new era of AI at the edge. - Vincent Huard (ICICDT, 2023)

Radiation Hardness Evaluations of a Stacked Flip Flop in a 22 nm FD-SOI Process by Heavy-Ion Irradiation. - Shotaro Sugitani; Ryuichi Nakajima; Takafumi Ito; Jun Furuta; Kazutoshi Kobayashi; Mathieu Louvat; Francois Jacquet; Jean-Christophe Eloy; Olivier Montfort; Lionel Jure; Vincent Huard (IOLTS, 2023)

A 12.4TOPS/W @ 136GOPS AI-IoT System-on-Chip with 16 RISC-V, 2-to-8b Precision-Scalable DNN Acceleration and 30%-Boost Adaptive Body Biasing. - Francesco Conti 001; Davide Rossi; Gianna Paulin; Angelo Garofalo; Alfio Di Mauro; Georg Rutishauser; Gianmarco Ottavi; Manuel Eggimann; Hayate Okuhara; Vincent Huard; Olivier Montfort; Lionel Jure; et al. (ISSCC, 2023)

Soft-Error Tolerance by Guard-Gate Structures on Flip-Flops in 22 and 65 nm FD-SOI Technologies. - Ryuichi Nakajima; Takafumi Ito; Shotaro Sugitani; Tomoya Kii; Mitsunori Ebara; Jun Furuta; Kazutoshi Kobayashi; Mathieu Louvat; Francois Jacquet; Jean-Christophe Eloy; Olivier Montfort; Lionel Jure; et al. (IEICE Trans. Electron., 2024)