Theoretical study about the RBSOA of a monolithic ESBT® (emitter-switched bipolar transistor) versus the saturation level before the switching-off. - Vincenzo Enea; D. Kroell; M. Messina; Cesare Ronsisvalle (Microelectron. J., 2008)

Improvement of high-voltage junction termination extension (JTE) by an optimized profile of lateral doping (VLD). - Cesare Ronsisvalle; Vincenzo Enea (Microelectron. Reliab., 2010)