UV-Assisted Probing of Deep-Level Interface Traps in GaN MISHEMTs and Their Role in Threshold Voltage & Gate Leakage Instabilities. - Sayak Dutta Gupta; Vipin Joshi; Bhawani Shankar; Swati Shikha; Srinivasan Raghavan 002; Mayank Shrivastava (IRPS, 2019)

On the Root Cause of Dynamic ON Resistance Behavior in AlGaN/GaN HEMTs. - Sayak Dutta Gupta; Vipin Joshi; Rajarshi Roy Chaudhuri; Anant kr Singh; Sirsha Guha; Mayank Shrivastava (IRPS, 2020)

Unique Lattice Temperature Dependent Evolution of Hot Electron Distribution in GaN HEMTs on C-doped GaN Buffer and its Reliability Consequences. - Rajarshi Roy Chaudhuri; Vipin Joshi; Amratansh Gupta; Tanmay Joshi; Rasik Rashid Malik; Mehak Ashraf Mir; Sayak Dutta Gupta; Mayank Shrivastava (IRPS, 2023)

Unique Dependence of the Breakdown Behavior of Normally-OFF Cascode AlGaN/GaN HEMTs on Carrier Transport Through the Carbon-Doped GaN Buffer. - Vipin Joshi; Sayak Dutta Gupta; Rajarshi Roy Chaudhuri; Mayank Shrivastava (IRPS, 2023)

Signatures of Positive Gate Over-Drive Induced Hole Trap Generation and its Impact on p-GaN Gate Stack Instability in AlGaN/GaN HEMTs. - Rasik Rashid Malik; Vipin Joshi; Rajarshi Roy Chaudhuri; Mehak Ashraf Mir; Zubear Khan; Avinas N. Shaji; Madhura Bhattacharya; Anup T. Vitthal; Mayank Shrivastava (IRPS, 2023)

Dynamic Interplay of Surface and Buffer Traps in Determining Drain Current Injection induced Device Instability in OFF-state of AlGaN/GaN HEMTs. - Mehak Ashraf Mir; Vipin Joshi; Rajarshi Roy Chaudhuri; Mohammad Ateeb Munshi; Rasik Rashid Malik; Mayank Shrivastava (IRPS, 2023)

Physical Insights into the DC and Transient Reverse Bias Reliability of β-Ga2O3 Based Vertical Schottky Barrier Diodes. - Harsh Raj; Vipin Joshi; Rajarshi Roy Chaudhuri; Rasik Rashid Malik; Mayank Shrivastava (IRPS, 2023)

Experimental Insights into the Role of Inter-valley and Defect Transitions of Hot Electrons in Determining Self-heating in AlGaN/GaN HEMTs. - Rajarshi Roy Chaudhuri; Vipin Joshi; Saniya S. Wani; Simran R. Karthik; Rasik Rashid Malik; Mayank Shrivastava (IRPS, 2024)

On The Role of Stress Engineering of Surface Passivation in Determining the Device Performance of AlGaN/GaN HEMTs. - Mehak Ashraf Mir; Anup Thakare; Mohammad Ateeb Munshi; V. Avinash; Saniya S. Wani; Zubear Khan; Rajarshi Roy Chaudhuri; Simran R. Karthik; Rasik Rashid Malik; Vipin Joshi; Mayank Shrivastava (IRPS, 2024)

Experimental Validation of Buffer Traps-Driven Electric Field Dynamics Governing Breakdown and Leakage Trends in AlGaN/GaN Heterostructures. - Rasik Rashid Malik; Simran R. Karthik; Vipin Joshi; Rajarshi Roy Chaudhuri; Mohammad Ateeb Munshi; Mehak Ashraf Mir; Saniya Syed Wani; Mayank Shrivastava (IRPS, 2025)