Mechanisms of positive gate bias stress induced instabilities in power VDMOSFETs. - Ninoslav Stojadinovic; Ivica Manic; Snezana Djoric-Veljkovic; Vojkan Davidovic; Snezana Golubovic; Sima Dimitrijev (Microelectron. Reliab., 2001)

Mechanisms of spontaneous recovery in positive gate bias stressed power VDMOSFETs. - Ninoslav Stojadinovic; Ivica Manic; Snezana Djoric-Veljkovic; Vojkan Davidovic; Danijel Dankovic; Snezana Golubovic; Sima Dimitrijev (Microelectron. Reliab., 2002)

Effects of high electric field and elevated-temperature bias stressing on radiation response in power VDMOSFETs. - Ninoslav Stojadinovic; Ivica Manic; Snezana Djoric-Veljkovic; Vojkan Davidovic; Snezana Golubovic; Sima Dimitrijev (Microelectron. Reliab., 2002)

Effects of burn-in stressing on post-irradiation annealing response of power VDMOSFETs. - Snezana Djoric-Veljkovic; Ivica Manic; Vojkan Davidovic; Snezana Golubovic; Ninoslav Stojadinovic (Microelectron. Reliab., 2003)

Effects of hot carrier and irradiation stresses on advanced excimer laser annealed polycrystalline silicon thin film transistors. - Dimitrios N. Kouvatsos; Vojkan Davidovic; George J. Papaioannou; Ninoslav Stojadinovic; Loukas Michalas; M. A. Exarchos; Apostolos T. Voutsas; Dimitrios Goustouridis (Microelectron. Reliab., 2004)

Negative bias temperature instability mechanisms in p-channel power VDMOSFETs. - Ninoslav Stojadinovic; Danijel Dankovic; Snezana Djoric-Veljkovic; Vojkan Davidovic; Ivica Manic; Snezana Golubovic (Microelectron. Reliab., 2005)

Effects of electrical stressing in power VDMOSFETs. - Ninoslav Stojadinovic; Ivica Manic; Vojkan Davidovic; Danijel Dankovic; Snezana Djoric-Veljkovic; Snezana Golubovic; Sima Dimitrijev (Microelectron. Reliab., 2005)

NBT stress-induced degradation and lifetime estimation in p-channel power VDMOSFETs. - Danijel Dankovic; Ivica Manic; Snezana Djoric-Veljkovic; Vojkan Davidovic; Snezana Golubovic; Ninoslav Stojadinovic (Microelectron. Reliab., 2006)

Negative bias temperature instabilities in sequentially stressed and annealed p-channel power VDMOSFETs. - Danijel Dankovic; Ivica Manic; Vojkan Davidovic; Snezana Djoric-Veljkovic; Snezana Golubovic; Ninoslav Stojadinovic (Microelectron. Reliab., 2007)

Influence of polysilicon film thickness on radiation response of advanced excimer laser annealed polycrystalline silicon thin film transistors. - Vojkan Davidovic; Dimitrios N. Kouvatsos; Ninoslav Stojadinovic; Apostolos T. Voutsas (Microelectron. Reliab., 2007)

Mechanisms of spontaneous recovery in DC gate bias stressed power VDMOSFETs. - Ivica Manic; Snezana Djoric-Veljkovic; Vojkan Davidovic; Danijel Dankovic; Snezana Golubovic; Ninoslav Stojadinovic (IET Circuits Devices Syst., 2008)

Negative bias temperature instability in n-channel power VDMOSFETs. - Danijel Dankovic; Ivica Manic; Vojkan Davidovic; Snezana Djoric-Veljkovic; Snezana Golubovic; Ninoslav Stojadinovic (Microelectron. Reliab., 2008)

Effects of low gate bias annealing in NBT stressed p-channel power VDMOSFETs. - Ivica Manic; Danijel Dankovic; Snezana Djoric-Veljkovic; Vojkan Davidovic; Snezana Golubovic; Ninoslav Stojadinovic (Microelectron. Reliab., 2009)

Threshold voltage instabilities in p-channel power VDMOSFETs under pulsed NBT stress. - Ninoslav Stojadinovic; Danijel Dankovic; Ivica Manic; Aneta Prijic; Vojkan Davidovic; Snezana Djoric-Veljkovic; Snezana Golubovic; Zoran Prijic (Microelectron. Reliab., 2010)

NBTI related degradation and lifetime estimation in p-channel power VDMOSFETs under the static and pulsed NBT stress conditions. - Ivica Manic; Danijel Dankovic; Aneta Prijic; Vojkan Davidovic; Snezana Djoric-Veljkovic; Snezana Golubovic; Zoran Prijic; Ninoslav Stojadinovic (Microelectron. Reliab., 2011)

Reliability Physics and Engineering: Time-to-Failure Modeling, J.W. McPherson. Springer (2010). 318 pp., ISBN: 978-1-4419-6347-5. - Vojkan Davidovic (Microelectron. Reliab., 2012)

Nanoelectronic Devices, B.-G. Park, S.W. Hwang, Y.J. Park. Pan Stanford Publishing Pte. Ltd., Singapore (2012). 406 p., ISBN: 978-981-4364-00-3. - Vojkan Davidovic (Microelectron. Reliab., 2013)

A review of pulsed NBTI in P-channel power VDMOSFETs. - Danijel Dankovic; Ivica Manic; Aneta Prijic; Vojkan Davidovic; Zoran Prijic; Snezana Golubovic; Snezana Djoric-Veljkovic; Albena Paskaleva; Dencho Spassov; Ninoslav Stojadinovic (Microelectron. Reliab., 2018)

NBTI and irradiation related degradation mechanisms in power VDMOS transistors. - Ninoslav Stojadinovic; Snezana Djoric-Veljkovic; Vojkan Davidovic; Snezana Golubovic; Srboljub Stankovic; Aneta Prijic; Zoran Prijic; Ivica Manic; Danijel Dankovic (Microelectron. Reliab., 2018)

Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress. - Sandra Veljkovic; Nikola Mitrovic; Vojkan Davidovic; Snezana Golubovic; Snezana Djoric-Veljkovic; Albena Paskaleva; Dencho Spassov; Srboljub Stankovic; Marko S. Andjelkovic; Zoran Prijic; Ivica Manic; Aneta Prijic; et al. (J. Circuits Syst. Comput., 2022)