Potential remedies for the VT/Vfb-shift problem of Hf/polysilicon-based gate stacks: a solution-based survey. - W. Deweerd; Vidya Kaushik; J. Chen; Y. Shimamoto; Tom Schram; L.-Å. Ragnarsson; Annelies Delabie; Luigi Pantisano; B. Eyckens; J. W. Maes (Microelectron. Reliab., 2005)

Performance improvement of self-aligned HfO2/TaN and SiON/TaN nMOS transistors. - Tom Schram; L.-Å. Ragnarsson; G. S. Lujan; W. Deweerd; J. Chen; W. Tsai; K. Henson; R. J. P. Lander; J. C. Hooker; J. Vertommen (Microelectron. Reliab., 2005)

Mechanism of O2-anneal induced Vfb shifts of Ru gated stacks. - Z. Li; Tom Schram; Luigi Pantisano; A. Stesmans; Thierry Conard; S. Shamuilia; V. V. Afanasiev; A. Akheyar; Sven Van Elshocht; D. P. Brunco; W. Deweerd; Y. Naoki; et al. (Microelectron. Reliab., 2007)