High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps. - Davide Favero; A. Cavaliere; Carlo De Santi; Matteo Borga; W. Gonçalez Filho; Karen Geens; Benoit Bakeroot; Stefaan Decoutere; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini (IRPS, 2023)