Charge trapping and degradation in Ge+ ion implanted SiO2 layers during high-field electron injection. - A. N. Nazarov; I. N. Osiyuk; V. S. Lysenko; T. Gebel; Lars Rebohle; W. Skorupa (Microelectron. Reliab., 2002)

Deep-level defects study of arsenic-implanted ZnO single crystal. - C. Y. Zhu; C. C. Ling; G. Brauer; W. Anwand; W. Skorupa (Microelectron. J., 2009)