Key measurements of ultrathin gate dielectric reliability and in-line monitoring. - W. W. (Bill) Abadeer; Asmik Bagramian; David W. Conkle; Charles W. Griffin; Eric D. Langlois 001; Brian F. Lloyd; Raymond P. Mallette; James E. Massucco; Jonathan M. McKenna; Steven W. Mittl; Philip H. Noel (IBM J. Res. Dev., 1999)

Ultralow-power SRAM technology. - Randy W. Mann; W. W. (Bill) Abadeer; Matthew J. Breitwisch; O. Bula; Jeff S. Brown; Bryant C. Colwill; Peter E. Cottrell; William T. Crocco Jr.; Stephen S. Furkay; Michael J. Hauser; Terence B. Hook; Dennis Hoyniak; et al. (IBM J. Res. Dev., 2003)

Effect of stress voltages on voltage acceleration and lifetime projections for ultra-thin gate oxides. - W. W. (Bill) Abadeer (Microelectron. Reliab., 2007)