High performance of short-channel MOSFETs due to an elevated central-channel doping. - Masayasu Tanaka; N. Tokida; T. Okagaki; Mitiko Miura-Mattausch; Walter Hansch; Hans Jürgen Mattausch (ASP-DAC, 2000)

erformance Optimization Of 60 Nm Channel Length Vertical Mosfets Using Channel Engineering. - G. Shrivastav; S. Mahapatra; V. Ramgopal Rao; J. Vasi; K. G. Anil; C. Fink; Walter Hansch; I. Eisele (VLSI Design, 2001)

Nitrogen implantations for rapid thermal oxinitride layers. - A. Stadler; I. Genchev; A. Bergmaier; G. Dollinger; Vesselinka Petrova-Koch; Walter Hansch; H. Baumgärtner; I. Eisele (Microelectron. Reliab., 2001)

The tunnelling field effect transistors (TFET): the temperature dependence, the simulation model, and its application. - Thomas Nirschl; Peng-Fei Wang; Walter Hansch; Doris Schmitt-Landsiedel (ISCAS (3), 2004)

Zeitdiskrete Modellierung der Wechselwirkungen der Plan-Vorgaben bei Verwendung der Liefertreue als Leistungsgröße für die interne Supply Chain in der Halbleiterindustrie. - Kirsten Hilsenbeck; Alexander Schömig; Walter Hansch (OR, 2004)

Evaluation of effective stress times and stress levels from mission profiles for semiconductor reliability. - Alexander Hirler; Josef Biba; Adnan Alsioufy; T. Lehndorff; Torsten Sulima; H. Lochner; U. Abelein; Walter Hansch (Microelectron. Reliab., 2017)

Alternating Temperature Stress and Deduction of Effective Stress Levels from Mission Profiles for Semiconductor Reliability. - Alexander Hirler; Adnan Alsioufy; Josef Biba; T. Lehndorff; D. Lipp; Helmut Lochner; Mahesh Siddabathula; S. Simon; Torsten Sulima; Maciej Wiatr; Walter Hansch (IRPS, 2019)