FDSOI: From substrate to devices and circuit applications. - Carlos Mazure; Richard Ferrant; Bich-Yen Nguyen; Walter Schwarzenbach; Cécile Moulin (ESSCIRC, 2010)

Strained silicon on insulator substrates for fully depleted application. - Walter Schwarzenbach; N. Daval; S. Kerdilès; G. Chabanne; C. Figuet; S. Guerroudj; O. Bonnin; X. Cauchy; Bich-Yen Nguyen; Christophe Maleville (ICICDT, 2012)

Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs. - François Andrieu; Mikaël Cassé; E. Baylac; P. Perreau; O. Nier; Denis Rideau; R. Berthelon; Franck Pourchon; A. Pofelski; Barbara De Salvo; C. Gallon; Vincent Mazzocchi; et al. (ESSDERC, 2014)

Superior performance and Hot Carrier reliability of Strained FDSOI nMOSFETs for advanced CMOS technology nodes. - Guillaume Besnard; Xavier Garros; François Andrieu; Phuong Nguyen; William van den Daele; Patrick Reynaud; Walter Schwarzenbach; Daniel Delprat; Konstantin Bourdelle; Gilles Reimbold; Sorin Cristoloveanu (ESSDERC, 2014)

Performance and reliability of strained SOI transistors for advanced planar FDSOI technology. - Guillaume Besnard; Xavier Garros; Alexandre Subirats; François Andrieu; X. Federspiel; M. Rafik; Walter Schwarzenbach; Gilles Reimbold; Olivier Faynot; Sorin Cristoloveanu (IRPS, 2015)

FD-SOI material enabling CMOS technology disruption from 65nm to 12nm and beyond. - Walter Schwarzenbach; Manuel Sellier; Bich-Yen Nguyen; Christophe Girard; Christophe Maleville (ICICDT, 2017)

22FD-SOI Variability Improvement Thanks to SmartCut Thickness Control at Atomic Scale. - Walter Schwarzenbach; L. Loubriat; Vincent Joseph; Laurent Viravaux; Olivier Moreau; Sebastien Lasserre; Bich-Yen Nguyen (ESSDERC, 2019)

Low Temperature SmartCutTM enables High Density 3D SoC Applications. - Walter Schwarzenbach; Bich-Yen Nguyen; Guillaume Besnard (ICICDT, 2019)

Engineered SiC materials for power technologies. - Walter Schwarzenbach; S. Rouchier; G. Berre; R. Boulet; O. Ledoux; Enrica Cela; Alexis Drouin; A. Chapelle; S. Monnoye; H. Biard; K. Alassaad; L. Viravaux; et al. (ICICDT, 2022)