PBTI and HCI degradations of ultrathin body InGaAs-On-Insulator nMOSFETs fabricated by wafer bonding. - Xiaoyu Tang; J. Lu; Rui Zhang 024; Yi Zhao; Wangran Wu; Chang Liu; Yi Shi; Ziqian Huang; Yuechan Kong (IRPS, 2015)

Gate length dependence of bias temperature instability behavior in short channel SOI MOSFETs. - Wangran Wu; J. Lu; Chang Liu; Heng Wu; Xiaoyu Tang; Jiabao Sun; Rui Zhang 024; Wenjie Yu; Xi Wang; Yi Zhao (Microelectron. Reliab., 2016)