Structure optimization of multi-finger power SiGe HBTs for thermal stability improvement. - Dongyue Jin; Wanrong Zhang 002; Hongyun Xie; Liang Chen; Pei Shen; Ning Hu (Microelectron. Reliab., 2009)

A Novel Low Power UWB Cascode SiGe BiCMOS LNA with Current Reuse and Zero-Pole Cancellation - Chunbao Ding; Wanrong Zhang 002; Dongyue Jin; Hongyun Xie; Pei Shen; Liang Chen (CoRR, 2012)

An inductorless high linear UWB Cascode LNA with tunable active resistance feedback and post-linearization technique. - Chunbao Ding; Wanrong Zhang 002; Dongyue Jin; Hongyun Xie; Yanxiao Zhao; Qiang Fu; Jiaxin Ju (Microelectron. J., 2013)

Novel superjunction collector design of power SiGe HBTs for high fT×BVCEO×β product. - Xiao Wang; Dongyue Jin; Wanrong Zhang 002; Xinyi Zhao; Yanling Guo; Qiang Fu (ASICON, 2015)

Low power dissipation SiGe HBT dual-band variable gain amplifier. - Hongyun Xie; Shuo Liu; Lianghao Zhang; Zhiyun Jiang; Yanxiao Zhao; Liang Chen; Wanrong Zhang 002 (Microelectron. J., 2015)

A neural network circuit with associative learning and forgetting process based on memristor neuromorphic device. - Xiaoqiang Lv; Yimao Cai; Yuchao Yang 001; Zhizhen Yu; Yichen Fang; Zongwei Wang 001; Lindong Wu; Jianfeng Liu; Wanrong Zhang 002; Ru Huang 001 (ASICON, 2017)

Automated Neural Network-Based Multiphysics Parametric Modeling of Microwave Components. - Weicong Na; Wanrong Zhang 002; Shuxia Yan; Feng Feng; Wei Zhang 145; Yaoqian Zhang (IEEE Access, 2019)

Automated Neural-Based Modeling of Microwave Devices Using Parallel Computation and Interpolation Approaches. - Weicong Na; Wanrong Zhang 002; Shuxia Yan; Gaohua Liu (IEEE Access, 2019)

Effective gate length model for asymmetrical gate-all-around silicon nanowire transistors. - Xiaoqiao Dong; Ming Li; Wanrong Zhang 002; Yuancheng Yang; Gong Chen; Shuang Sun; Jianing Wang; Xiaoyan Xu; Xia An (Sci. China Inf. Sci., 2020)

A novel high quantum efficiency SiGe Phototransistor detector. - Yang Xiang; Hongyun Xie; Yin Sha; Ruilang Ji; Fu Zhu; Wanrong Zhang 002 (ICTA, 2021)

Process Variation Based Electrical Model of STT-Assisted VCMA-MTJ and Its Application in NV-FA. - Dongyue Jin; Luming Cao; You Wang; Xiaoxue Jia; Yongan Pan; Yuxin Zhou; Xin Lei; Yuanyuan Liu; Yingqi Yang; Wanrong Zhang 002 (IEICE Trans. Electron., 2022)

A novel CMOS active inductor with high quality factor, high linearity and mutually independent tuning of inductance and quality factor. - Xiaoxue Wang; Wanrong Zhang 002; Weicong Na; Dongyue Jin; Hongyun Xie; Yangui Ren; Nanxing Li; Wenjing Gao; Yinfeng Wu (Microelectron. J., 2023)

TokenShapley: Token Level Context Attribution with Shapley Value. - Yingtai Xiao; Yuqing Zhu 005; Sirat Samyoun; Wanrong Zhang 002; Jiachen T. Wang; Jian Du (ACL (Findings), 2025)

An improved gyrator-capacitor architecture based high quality-factor active inductor with joint positive and negative feedback loops for various radio-frequency bands operation. - Xiaoxue Wang; Wanrong Zhang 002; Weicong Na; Dongyue Jin; Hongyun Xie; Jinda Song; Jian Cao; Hanmin Chen (Microelectron. J., 2025)