Origin of physical degradation in AlGaN/GaN on Si high electron mobility transistors under reverse bias stressing. - Wardhana A. Sasangka; Govindo J. Syaranamual; Chee Lip Gan; Carl V. Thompson (IRPS, 2015)

Role of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) ON-state degradation. - Govindo J. Syaranamual; Wardhana A. Sasangka; Riko I. Made; Subramaniam Arulkumaran; Geok Ing Ng; Siew Chuen Foo; Chee Lip Gan; Carl V. Thompson (Microelectron. Reliab., 2016)

Characterisation of defects generated during constant current InGaN-on-silicon LED operation. - Riko I. Made; Yu Gao; Govindo J. Syaranamual; Wardhana A. Sasangka; L. Zhang; Xuan Sang Nguyen; Y. Y. Tay; Jason Scott Herrin; Carl V. Thompson; Chee Lip Gan (Microelectron. Reliab., 2017)

Improved reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with high density silicon nitride passivation. - Wardhana A. Sasangka; Govindo J. Syaranamual; Y. Gao; Riko I. Made; Chee Lip Gan; Carl V. Thompson (Microelectron. Reliab., 2017)

Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors. - Wardhana A. Sasangka; Yu Gao; Chee Lip Gan; Carl V. Thompson (Microelectron. Reliab., 2018)