Electrical Characterization of Aluminum-Oxynitride Stacked Gate Dielectrics Prepared by a Layer-by-Layer Process of Chemical Vapor Deposition and Rapid Thermal Nitridation. - Hideki Murakami; Wataru Mizubayashi; Hirokazu Yokoi; Atsushi Suyama; Seiichi Miyazaki (IEICE Trans. Electron., 2005)

Carrier separation analysis for clarifying carrier conduction and degradation mechanisms in high-k stack gate dielectrics. - Wataru Mizubayashi; Naoki Yasuda; Kenji Okada; Hiroyuki Ota; Hirokazu Hisamatsu; Kunihiko Iwamoto; Koji Tominaga; Katsuhiko Yamamoto; Tsuyoshi Horikawa; Toshihide Nabatame (Microelectron. Reliab., 2005)

Two-step annealing effects on ultrathin EOT higher-k (k = 40) ALD-HfO2 gate stacks. - Yukinori Morita; Shinji Migita; Wataru Mizubayashi; Meishoku Masahara; Hiroyuki Ota (ESSDERC, 2012)

Guidelines for symmetric threshold voltage in tunnel FinFETs with single and dual metal gate electrodes. - Wataru Mizubayashi; Koichi Fukuda; Takahiro Mori; Kazuhiko Endo; Yongxun Liu; Takashi Matsukawa; Shin-ichi O'Uchi; Yuki Ishikawa; Shinji Migita; Yukinori Morita; Akihito Tanabe; Junichi Tsukada; et al. (ESSDERC, 2013)

Performance limit of parallel electric field tunnel FET and improvement by modified gate and channel configurations. - Yukinori Morita; Takahiro Mori; Shinji Migita; Wataru Mizubayashi; Akihito Tanabe; Koichi Fukuda; Takashi Matsukawa; Kazuhiko Endo; Shin-ichi O'Uchi; Yongxun Liu; Meishoku Masahara; Hiroyuki Ota (ESSDERC, 2013)

Variation behavior of tunnel-FETs originated from dopant concentration at source region and channel edge configuration. - Shinji Migita; Takashi Matsukawa; Takahiro Mori; Koichi Fukuda; Yukinori Morita; Wataru Mizubayashi; Kazuhiko Endo; Yongxun Liu; Shin-ichi O'Uchi; Meishoku Masahara; Hiroyuki Ota (ESSDERC, 2014)

Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on tunnel FET performance. - Yukinori Morita; Takahiro Mori; Shinji Migita; Wataru Mizubayashi; Koichi Fukuda; Takashi Matsukawa; Kazuhiko Endo; Shin-ichi O'Uchi; Yongxun Liu; Meishoku Masahara; Hiroyuki Ota (ESSDERC, 2014)

PBTI for N-type tunnel FinFETs. - Wataru Mizubayashi; Takahiro Mori; Koichi Fukuda; Yongxun Liu; Takashi Matsukawa; Yuki Ishikawa; Kazuhiko Endo; Shin-ichi O'Uchi; Junichi Tsukada; Hiromi Yamauchi; Yukinori Morita; Shinji Migita; et al. (ICICDT, 2015)

Analysis of charge-to-hot-carrier degradation in Ge pFinFETs. - Wataru Mizubayashi; Hiroshi Oka; Koichi Fukuda; Yuki Ishikawa; Kazuhiko Endo (IRPS, 2020)