A 5-nm 254-TOPS/W 221-TOPS/mm2 Fully-Digital Computing-in-Memory Macro Supporting Wide-Range Dynamic-Voltage-Frequency Scaling and Simultaneous MAC and Write Operations. - Hidehiro Fujiwara; Haruki Mori; Wei-Chang Zhao; Mei-Chen Chuang; Rawan Naous; Chao-Kai Chuang; Takeshi Hashizume; Dar Sun; Chia-Fu Lee; Kerem Akarvardar; Saman Adham; Tan-Li Chou; et al. (ISSCC, 2022)

A 4nm 6163-TOPS/W/b $ mathbf{4790-TOPS/mm^{2}/b}$ SRAM Based Digital-Computing-in-Memory Macro Supporting Bit-Width Flexibility and Simultaneous MAC and Weight Update. - Haruki Mori; Wei-Chang Zhao; Cheng-En Lee; Chia-Fu Lee; Yu-Hao Hsu; Chao-Kai Chuang; Takeshi Hashizume; Hao-Chun Tung; Yao-Yi Liu; Shin-Rung Wu; Kerem Akarvardar; Tan-Li Chou; et al. (ISSCC, 2023)

34.4 A 3nm, 32.5TOPS/W, 55.0TOPS/mm2 and 3.78Mb/mm2 Fully-Digital Compute-in-Memory Macro Supporting INT12 × INT12 with a Parallel-MAC Architecture and Foundry 6T-SRAM Bit Cell. - Hidehiro Fujiwara; Haruki Mori; Wei-Chang Zhao; Kinshuk Khare; Cheng-En Lee; Xiaochen Peng; Vineet Joshi; Chao-Kai Chuang; Shu-Huan Hsu; Takeshi Hashizume; Toshiaki Naganuma; Chen-Hung Tien; et al. (ISSCC, 2024)

29.5 A 3nm 3.6GHz Dual-Port SRAM with Backend-RC Optimization and a Far-End Write-Assist Scheme. - Hidehiro Fujiwara; Wei-Chang Zhao; Kinshuk Khare; Yi-Hsin Nien; Chih-Yu Lin; Cheng-Han Lin; Shan-Ru Liao; Kenta Torigoe; Shirleen Xia; Yuichiro Ishii; Yao-Yi Lin; Jhon-Jhy Liaw; et al. (ISSCC, 2025)